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ZTX776L

Description
Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size119KB,6 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric Compare View All

ZTX776L Overview

Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX776L Parametric

Parameter NameAttribute value
Parts packaging codeTO-92
package instructionIN-LINE, R-PSIP-W3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
Base Number Matches1

ZTX776L Related Products

ZTX776L ZTX776M1 ZTX776Q
Description Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Parts packaging code TO-92 TO-92 TO-92
package instruction IN-LINE, R-PSIP-W3 SMALL OUTLINE, R-PSSO-G3 IN-LINE, R-PSIP-W3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A
Collector-emitter maximum voltage 200 V 200 V 200 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 20 20 20
JESD-30 code R-PSIP-W3 R-PSSO-G3 R-PSIP-W3
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO YES NO
Terminal surface MATTE TIN MATTE TIN MATTE TIN
Terminal form WIRE GULL WING WIRE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 40 40
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 30 MHz 30 MHz 30 MHz
Maker - Diodes Incorporated Diodes Incorporated
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