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FSAM20SL60
FSAM20SL60
SPM
TM
(Smart Power Module)
General Description
FSAM20SL60 is an advanced smart power module (SPM)
that Fairchild has newly developed and designed to provide
very compact and high performance ac motor drives mainly
targeting low speed low-power inverter-driven application
like air conditioners. It combines optimized circuit protection
and drive matched to low-loss IGBTs. Highly effective
short-circuit current detection/protection is realized through
the use of advanced current sensing IGBT chips that allow
continuous monitoring of the IGBTs current. System
reliability is further enhanced by the built-in over-
temperature monitoring and integrated under-voltage lock-
out protection. The high speed built-in HVIC provides opto-
coupler-less IGBT gate driving capability that further reduce
the overall size of the inverter system design. In addition the
incorporated HVIC facilitates the use of single-supply drive
topology enabling the FSAM20SL60 to be driven by only
one drive supply voltage without negative bias. Inverter
current sensing application can be achieved due to the
divided negative dc terminals.
Features
• UL Certified No. E209204
• 600V-20A 3-phase IGBT inverter bridge including control
ICs for gate driving and protection
• Divided negative dc-link terminals for inverter current
sensing applications
• Single-grounded power supply due to built-in HVIC
• Typical switching frequency of 3kHz
• Built-in thermistor for over-temperature monitoring
• Inverter power rating of 1.5kW / 100~253 Vac
• Isolation rating of 2500Vrms/min.
• Very low leakage current due to using ceramic substrate
• Adjustable current protection level by varying series
resistor value with sense-IGBTs
Applications
• AC 100V ~ 253V 3-phase inverter drive for small power
(1.5kW) ac motor drives
• Home appliances applications requiring low switching
frequency operation like air conditioners drive system
• Application ratings:
- Power : 1.5kW / 100~253 Vac
- Switching frequency : Typical 3kHz (PWM Control)
- 100% load current : 8A (Irms)
- 150% load current : 12A (Irms) for 1 minute
External View
Top View
Bottom View
60mm
31mm
Fig. 1.
©2003 Fairchild Semiconductor Corporation
Rev. D, August 2003
FSAM20SL60
Integrated Power Functions
• 600V-20A IGBT inverter for 3-phase DC/AC power conversion (Please refer to Fig. 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting
Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figs. 14and 15.
• For inverter low-side IGBTs: Gate drive circuit, Short-Circuit (SC) protection
Control supply circuit under-voltage (UV) protection
• Temperature Monitoring: System over-temperature monitoring using built-in thermistor
Note) Available temperature monitoring circuit is given in Fig. 15.
• Fault signaling: Corresponding to a SC fault (Low-side IGBTs) or a UV fault (Low-side control supply circuit)
• Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Top View
(1) V
CC(L)
(2) com
(L)
(3) IN
(UL)
(4) IN
(VL)
(5) IN
(WL)
(6) com
(L)
(7) FO
(8) C
FOD
(9) C
SC
(10) R
SC
(11) IN
(UH)
(12) V
CC(UH)
(13) V
B(U)
(14) V
S(U)
(15) IN
(VH)
(16) com
(H)
(17) V
CC(VH)
(18) V
B(V)
(19) V
S(V)
(20) IN
(WH)
(21) V
CC(WH)
(22) V
B(W)
(23) V
S(W)
(24) V
TH
(25) R
TH
(26) N
U
(27) N
V
(28) N
W
(29) U
Case Temperature (T
C
)
Detecting Point
(30) V
(31) W
Ceramic Substrate
(32) P
Fig. 2.
©2003 Fairchild Semiconductor Corporation
Rev. D, August 2003
FSAM20SL60
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
Pin Name
V
CC(L)
COM
(L)
IN
(UL)
IN
(VL)
IN
(WL)
COM
(L)
V
FO
C
FOD
C
SC
R
SC
IN
(UH)
V
CC(UH)
V
B(U)
V
S(U)
IN
(VH)
COM
(H)
V
CC(VH)
V
B(V)
V
S(V)
IN
(WH)
V
CC(WH)
V
B(W)
V
S(W)
V
TH
R
TH
N
U
N
V
N
W
U
V
W
P
Pin Description
Low-side Common Bias Voltage for IC and IGBTs Driving
Low-side Common Supply Ground
Signal Input for Low-side U Phase
Signal Input for Low-side V Phase
Signal Input for Low-side W Phase
Low-side Common Supply Ground
Fault Output
Capacitor for Fault Output Duration Time Selection
Capacitor (Low-pass Filter) for Short-Circuit Current Detection Input
Resistor for Short-Circuit Current Detection
Signal Input for High-side U Phase
High-side Bias Voltage for U Phase IC
High-side Bias Voltage for U Phase IGBT Driving
High-side Bias Voltage Ground for U Phase IGBT Driving
Signal Input for High-side V Phase
High-side Common Supply Ground
High-side Bias Voltage for V Phase IC
High-side Bias Voltage for V Phase IGBT Driving
High-side Bias Voltage Ground for V Phase IGBT Driving
Signal Input for High-side W Phase
High-side Bias Voltage for W Phase IC
High-side Bias Voltage for W Phase IGBT Driving
High-side Bias Voltage Ground for W Phase IGBT Driving
Thermistor Bias Voltage
Series Resistor for the Use of Thermistor (Temperature Detection)
Negative DC–Link Input for U Phase
Negative DC–Link Input for V Phase
Negative DC–Link Input for W Phase
Output for U Phase
Output for V Phase
Output for W Phase
Positive DC–Link Input
©2003 Fairchild Semiconductor Corporation
Rev. D, August 2003
FSAM20SL60
Internal Equivalent Circuit and Input/Output Pins
Bottom View
(22) V
B(W )
(21) V
C C(W H )
(20) IN
(W H )
(23) V
S(W )
(18) V
B(V )
(17) V
C C(VH )
(16) C O M
(H )
(15) IN
(VH )
(19) V
S(V )
(13) V
B(U )
(12) V
C C(UH )
(11) IN
(U H )
(14) V
S(U )
(10) R
SC
(9) C
SC
(8) C
FO D
(7) V
FO
(6) C O M
(L)
(5) IN
(W L)
(4) IN
(VL)
(3) IN
(U L)
(2) C O M
(L)
(1) V
C C(L)
VB
VC C
COM
IN
OUT
VS
(32) P
(31) W
VB
VC C
COM
IN
OUT
VS
(30) V
VB
VC C
COM
IN
VS
(29) U
OUT
C (S C )
C (F O D )
VF O
O U T (W L)
(28) N
W
IN (W L)
IN (V L)
IN (U L)
C O M (L)
VC C
(26) N
U
THE RM ISTO R
O U T (V L)
(27) N
V
O U T (U L)
(25) R
T H
(24) V
T H
Note:
1) Inverter low-side is composed of three sense-IGBTs including freewheeling diodes for each IGBT and one control IC which has gate driving, current sensing and
protection functions.
2) Inverter power side is composed of four inverter dc-link input pins and three inverter output pins.
3) Inverter high-side is composed of three normal-IGBTs including freewheeling diodes and three drive ICs for each IGBT.
Fig. 3.
©2003 Fairchild Semiconductor Corporation
Rev. D, August 2003
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