A Product Line of
Diodes Incorporated
ZXMP6A17DN8
DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
ADVANCE INFORMATION
Product Summary
V
(BR)DSS
-60V
R
DS(on)
Max
125mΩ @ V
GS
= -10V
190mΩ @ V
GS
= -4.5V
I
D
T
A
= 25°C
(Notes 7 & 9)
-3.4A
-2.8A
Features
•
•
•
•
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Description
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Mechanical Data
•
•
•
•
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
Method 208
Weight: 0.074 grams (approximate)
Applications
•
•
•
•
DC-DC Converters
Power Management functions
Disconnect Switches
Motor control
SO-8
S1
G1
S2
G2
Top View
Top View
D1
D1
D2
D2
D1
D2
G1
S1
G2
S2
Equivalent Circuit
Ordering Information
(Notes 4 & 5)
Product
ZXMP6A17DN8TA
ZXMP6A17DN8QTA
Notes:
Grade
AEC-Q101
Automotive
Marking
ZXMP6A17D
ZXMP6A17D
Reel size (inches)
7
7
Tape width (mm)
12
12
Quantity per reel
500
500
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com
Marking Information
ZXMP6A17D = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 11 = 2011)
WW = Week (01 - 53)
ZXMP6A17DN8
Document Number DS33588 Rev 2 - 2
1 of 8
www.diodes.com
August 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP6A17DN8
ADVANCE INFORMATION
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
V
GS
= 10V
(Notes 7 & 9)
T
A
= 70°C (Notes 7 & 9)
(Notes 6 & 9)
(Notes 8 & 9)
(Notes 7 & 9)
(Notes 8 & 9)
Symbol
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
Value
-60
±20
-3.42
-2.73
-2.7
-15.6
-3.4
-15.6
Unit
V
V
A
A
A
A
Pulsed Drain current
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
(Notes 6 & 9)
Power dissipation
Linear derating factor
(Notes 6 & 10)
(Notes 7 & 9)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
Symbol
P
D
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 9 & 11)
R
θ
JA
R
θ
JL
T
J
, T
STG
Value
1.25
10.0
1.81
14.5
2.15
17
100
70
60
51.68
-55 to 150
Unit
W
mW/°C
°C/W
°C
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note (6), except the device is measured at t
≤
10 sec.
8. Same as note (6), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. Thermal resistance from junction to solder-point.
ZXMP6A17DN8
Document Number DS33588 Rev 2 - 2
2 of 8
www.diodes.com
August 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP6A17DN8
Thermal Characteristics
ADVANCE INFORMATION
1.6
Max Power Dissipation (W)
-I
D
Drain Current (A)
10
Limited
1
DC
1s
100ms
10ms
Single Pulse
T
amb
=25°C
1ms
100µs
R
DS(on)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
25mm x 25mm
1oz FR4
100m
10m
1m
100m
-V
DS
Drain-Source Voltage (V)
1
10
100 120 140 160
Temperature (°C)
Safe Operating Area
80
70
60
50
40
30
20
10
0
100µ
1m
10m 100m
D=0.2
D=0.1
Single Pulse
D=0.05
D=0.5
Derating Curve
Thermal Resistance (°C/W)
Maximum Power (W)
T
amb
=25°C
100
Single Pulse
T
amb
=25°C
10
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZXMP6A17DN8
Document Number DS33588 Rev 2 - 2
3 of 8
www.diodes.com
August 2012
© Diodes Incorporated
A Product Line of
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ZXMP6A17DN8
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 12)
Forward Transconductance (Notes 12 & 13)
Diode Forward Voltage (Note 12)
Reverse recovery time (Note 13)
Reverse recovery charge (Note 13)
DYNAMIC CHARACTERISTICS (Note 13)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 14)
Total Gate Charge (Note 14)
Gate-Source Charge (Note 14)
Gate-Drain Charge (Note 14)
Turn-On Delay Time (Note 14)
Turn-On Rise Time (Note 14)
Turn-Off Delay Time (Note 14)
Turn-Off Fall Time (Note 14)
Notes:
ADVANCE INFORMATION
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
fs
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-60
⎯
⎯
-1.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
4.7
-0.85
25.1
27.2
637
70
53
9.0
17.7
1.6
4.4
2.6
3.4
26.2
11.3
Max
⎯
-0.5
±100
⎯
0.125
0.190
⎯
-0.95
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
μA
nA
V
Ω
S
V
ns
nC
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
I
D
= -250μA, V
GS
= 0V
V
DS
= -60V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
I
D
= -250μA, V
DS
= V
GS
V
GS
= -10V, I
D
= -2.3A
V
GS
= -4.5V, I
D
= -1.9A
V
DS
= -15V, I
D
= -2.3A
I
S
= -2.0A, V
GS
= 0V
I
S
= -1.7A, di/dt = 100A/μs
V
DS
= -30V, V
GS
= 0V
f = 1MHz
V
GS
= -4.5V
V
GS
= -10V
V
DS
= -30V
I
D
= -2.2A
V
DD
= -30V, V
GS
= -10V
I
D
= -1A, R
G
≅
6.0Ω
12. Measured under pulsed conditions. Pulse width
≤
300μs; duty cycle
≤
2%
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.
ZXMP6A17DN8
Document Number DS33588 Rev 2 - 2
4 of 8
www.diodes.com
August 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP6A17DN8
ADVANCE INFORMATION
Typical Characteristics
T = 25°C
10V
5V
T = 150°C
10V
5V
4.5V
3.5V
3V
2.5V
2V
10
-I
D
Drain Current (A)
1
2.5V
-I
D
Drain Current (A)
4V
3.5V
3V
10
1
-V
GS
0.1
2V
-V
GS
0.1
1.5V
0.01
0.1
1
10
0.01
0.1
1
10
-V
DS
Drain-Source Voltage (V)
-V
DS
Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.8
V
GS
= -10V
10
Normalised R
DS(on)
and V
GS(th)
-I
D
Drain Current (A)
1.6
1.4
1.2
1.0
0.8
0.6
-50
0
50
V
GS
= V
DS
I
D
= -250uA
I
D
= - 2.3A
R
DS(on)
T = 150°C
1
T = 25°C
0.1
-V
DS
= 10V
V
GS(th)
1
2
3
4
100
150
-V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance
(Ω)
100
2V
-V
GS
2.5V
3V
3.5V
4V
5V
Normalised Curves v Temperature
-I
SD
Reverse Drain Current (A)
10
10
T = 150°C
1
1
T = 25°C
0.1
V
GS
= 0V
0.1
T = 25°C
10V
0.01
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1
10
On-Resistance v Drain Current
-I
D
Drain Current (A)
-V
SD
Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
ZXMP6A17DN8
Document Number DS33588 Rev 2 - 2
5 of 8
www.diodes.com
August 2012
© Diodes Incorporated
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