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PTF180451F

Description
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 31260, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size111KB,5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

PTF180451F Overview

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 31260, 2 PIN

PTF180451F Parametric

Parameter NameAttribute value
package instructionFLATPACK, R-CDFP-F2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-CDFP-F2
JESD-609 codee3
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLATPACK
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)250 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
Preliminary PTF180451E
PTF180451F
Thermally Enhanced High Power RF LDMOS FETs
45 W, DCS/PCS Band
1805 – 1880 MHz, 1930 – 1990 MHz
Description
PTF180451E and PTF180451F are thermally-enhanced, 45-watt, inter-
nally-matched
GOLDMOS
FETs intended for EDGE applications in the
DCS/PCS bands. Thermally-enhanced packaging provides the coolest op-
eration possible. Full gold metallization ensures excellent device lifetime
and reliability.
PTF180451E*
Package 30248
PTF180451F*
Package 31248
EDGE EVM Performance
EVM & Efficiency vs. Power Output
V
DD
= 28 V, I
DQ
= 0.65 A, f = 1989.8 MHz
4
40
Features
Thermally-enhanced packaging
Broadband internal matching
Typical two-tone performance
- Average output power = 23 W
- Gain = 17 dB
- Efficiency = 37%
Typical CW performance
- Output power at P–1dB = 58 W
- Gain = 16 dB
- Efficiency = 49%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI Drift
Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
EVM RMS (Average %)..
3
Efficiency
30
Efficiency (%)
2
20
1
EVM
0
35
33
37
35
39
37
41
39
43
41
43
45
10
0
Output Power (dBm)
ESD:
Electrostatic discharge sensitive device—observe handling
precautions!
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 650 mA, P
OUT
= 17 W, f = 1989.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 KHz
Modulation Spectrum @ 600 KHz
Gain
Drain Efficiency
*See Infineon distributor for future availability.
Preliminary Data Sheet
1
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
η
D
Min
Typ
1.7
–60
–73
16.5
32
Max
Units
%
dBc
dBc
dB
%
2004-06-03

PTF180451F Related Products

PTF180451F PTF180451E
Description RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 31260, 2 PIN RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 30260, 2 PIN
package instruction FLATPACK, R-CDFP-F2 FLANGE MOUNT, R-CDFM-F2
Contacts 2 2
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 65 V 65 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JESD-30 code R-CDFP-F2 R-CDFM-F2
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 200 °C 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR
Package form FLATPACK FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 250 W 250 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface MATTE TIN MATTE TIN
Terminal form FLAT FLAT
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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