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DB207S-C

Description
Bridge Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size146KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric Compare View All

DB207S-C Overview

Bridge Rectifier Diode,

DB207S-C Parametric

Parameter NameAttribute value
Reach Compliance Codecompliant
ECCN codeEAR99
Minimum breakdown voltage1000 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PDSO-G4
Maximum non-repetitive peak forward current60 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage1000 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
DB201S ~ DB207S
Elektronische Bauelemente
VOLTAGE 50 V ~ 1000 V
2.0 Amp Surface Mount Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
DB-1S
-
A
+
Low forward voltage drop, high current capability
Rating to 1000V PRV
Ideal for printed circuit board
Reliable low cost construction utilizing molded plastic technique
results in inexpensive products
Lead tin Pb / Sn copper
The plastic material has UL flammability classification 94V-0
B
J
E
D
~
~
C
L
MECHANICAL DATA
F
M
Polarity: As marked on Body
Weight:0.02 ounces, 0.38 grams
Mounting position: Any
REF.
A
B
C
D
E
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.
PARAMETERS
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
A
=40℃
Peak Forward Surge Current 8.3 ms Single Half
Sine-Wave Super Imposed on Rated Load
(JEDEC Method)
Maximum Forward Voltage at 1.5 A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance Per Element (Note1)
Typical Thermal Resistance (Note2)
2
Millimeter
Min.
Max.
8.20
8.80
10.0
10.3
7.80
8.50
3.15
3.40
6.20
6.50
REF.
F
J
L
M
Millimeter
Min.
Max.
5.00
5.20
0.95
1.20
0.20
0.35
1.40
1.60
SYMBOL
DB
201S
DB
202S
DB
203S
DB
204S
DB
205S
DB
206S
DB
207S
UNIT
V
A
A
V
uA
A
2
s
pF
℃/W
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
I
2
t
C
J
R
θJA
T
J
, T
STG
50
35
50
100
70
100
200
140
200
400
280
400
2.0
60
1.1
10
500
10.4
25
40
-55 ~ 150
600
420
600
800
560
800
1000
700
1000
@T
J
=25℃
@T
J
=125℃
Operating and Storage temperature range
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC
2. Thermal resistance from junction to ambient mounted on P.C.B. with 0.5*0.5"(13*13mm) copper pads.
01-Sep-2010 Rev. B
Page 1 of 2

DB207S-C Related Products

DB207S-C DB203S-C DB206S-C DB205S-C DB204S-C DB201S-C DB202S-C
Description Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode,
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Minimum breakdown voltage 1000 V 200 V 800 V 600 V 400 V 50 V 100 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Maximum non-repetitive peak forward current 60 A 60 A 60 A 60 A 60 A 60 A 60 A
Number of components 4 4 4 4 4 4 4
Phase 1 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 2 A 2 A 2 A 2 A 2 A 2 A 2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Maximum repetitive peak reverse voltage 1000 V 200 V 800 V 600 V 400 V 50 V 100 V
surface mount YES YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maker - SECOS SECOS SECOS SECOS SECOS SECOS

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