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DB207S

Description
Bridge Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size373KB,5 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
Download Datasheet Parametric Compare View All

DB207S Overview

Bridge Rectifier Diode,

DB207S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDSO-G4
Reach Compliance Codecompliant
Minimum breakdown voltage1000 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PDSO-G4
Maximum non-repetitive peak forward current60 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage1000 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
DB201S THRU DB207S
Technical Data
Data Sheet N1941, Rev. -
GLASS PASSIVATED SILICON BRIDGE RECTIFIERS
Features
Glass passivated die construction
Low forward voltage drop
High current capability
High surge current capability
Designed for surface mount application
Plastic material-UL flammability 94V-0
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
DB201S THRU DB207S
SINGLE-PHASE
DB-S
Circuit Diagram
Mechanical Data
Case: DB-S, molded plastic
Terminals: plated leads solderable per MIL-STD-202,
Method 208
Polarity: as marked on case
Mounting position: Any
Lead Free: For RoHS / Lead Free Version,
Maximum Ratings
@T
A
=25°C unless otherwise specified
Single Phase half wave 60Hz, resistive or inductive load. For capacitive load current derate by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Output Current
(Note 1)
@ T
A
=40°C
Non-Repetitive Peak Forward Surge
Current 8.3ms Single half sine-wave
superimposed on rated load (JEDEC
Method)
Symbol
V
RRM
V
RWM
V
R
V
RMS
I
F(AV)
DB
201S
50
35
DB
202S
100
70
DB
203S
200
140
DB
204S
400
280
2.0
DB
205S
600
420
DB
206S
800
560
DB
207S
1000
700
Unit
V
V
A
I
FSM
60
A
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

DB207S Related Products

DB207S DB203S DB205S DB206S DB204S DB201S DB202S
Description Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode,
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
package instruction R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
Minimum breakdown voltage 1000 V 200 V 600 V 800 V 400 V 50 V 100 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Maximum non-repetitive peak forward current 60 A 60 A 60 A 60 A 60 A 60 A 60 A
Number of components 4 4 4 4 4 4 4
Phase 1 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 2 A 2 A 2 A 2 A 2 A 2 A 2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 1000 V 200 V 600 V 800 V 400 V 50 V 100 V
surface mount YES YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker - Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd.

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