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UPD44325184BF5-E35-FQ1

Description
2MX18 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, PLASTIC, BGA-165
Categorystorage    storage   
File Size440KB,40 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

UPD44325184BF5-E35-FQ1 Overview

2MX18 QDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, PLASTIC, BGA-165

UPD44325184BF5-E35-FQ1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeBGA
package instructionLBGA, BGA165,11X15,40
Contacts165
Reach Compliance Codeunknown
ECCN code3A991
Maximum access time0.45 ns
Maximum clock frequency (fCLK)287 MHz
I/O typeSEPARATE
JESD-30 codeR-PBGA-B165
length17 mm
memory density37748736 bit
Memory IC TypeQDR SRAM
memory width18
Number of functions1
Number of terminals165
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
power supply1.5/1.8,1.8 V
Certification statusNot Qualified
Maximum seat height1.46 mm
Maximum standby current0.39 A
Minimum standby current1.7 V
Maximum slew rate0.56 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
width15 mm
Base Number Matches1
Datasheet
μ
PD44325084B
μ
PD44325094B
μ
PD44325184B
μ
PD44325364B
36M-BIT QDR II SRAM
4-WORD BURST OPERATION
Description
The
μ
PD44325084B is a 4,194,304-word by 8-bit, the
μ
PD44325094B is a 4,194,304-word by 9-bit, the
μ
PD44325184B is a 2,097,152-word by 18-bit and the
μ
PD44325364B is a 1,048,576-word by 36-bit
synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-
transistor memory cell.
The
μ
PD44325084B,
μ
PD44325094B,
μ
PD44325184B and
μ
PD44325364B integrate unique synchronous
peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are
latched on the positive edge of K and K#. These products are suitable for application which require
synchronous operation, high speed, low voltage, high density and wide bit configuration.
These products are packaged in 165-pin PLASTIC BGA.
TM
R10DS0039EJ0200
Rev.2.00
September 12, 2011
Features
1.8 ± 0.1 V power supply
165-pin PLASTIC BGA (15 x 17)
HSTL interface
PLL circuitry for wide output data valid window and future frequency scaling
Separate independent read and write data ports with concurrent transactions
100% bus utilization DDR READ and WRITE operation
Four-tick burst for reduced address frequency
Two input clocks (K and K#) for precise DDR timing at clock rising edges only
Two output clocks (C and C#) for precise flight time
and clock skew matching-clock and data delivered together to receiving device
Internally self-timed write control
Clock-stop capability. Normal operation is restored in 20
μ
s after clock is resumed.
User programmable impedance output (35 to 70
Ω)
Fast clock cycle time : 3.3 ns (300 MHz) , 3.5 ns (287MHz) , 4.0 ns (250 MHz) , 5.0 ns (200 MHz)
Simple control logic for easy depth expansion
JTAG 1149.1 compatible test access port
R10DS0039EJ0200 Rev.2.00
September 12, 2011
Page 1 of 39
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