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M93C66-DW3TG

Description
64 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8
Categorystorage    storage   
File Size306KB,34 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

M93C66-DW3TG Overview

64 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8

M93C66-DW3TG Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeSOIC
package instruction0.169 INCH, TSSOP-8
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
Spare memory width8
Maximum clock frequency (fCLK)2 MHz
Data retention time - minimum40
Durability1000000 Write/Erase Cycles
JESD-30 codeR-PDSO-G8
JESD-609 codee4
length4.4 mm
memory density4096 bi
Memory IC TypeEEPROM
memory width16
Humidity sensitivity level1
Number of functions1
Number of terminals8
word count256 words
character code256
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize256X16
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
power supply5 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Serial bus typeMICROWIRE
Maximum standby current0.00005 A
Maximum slew rate0.0015 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
width3 mm
Maximum write cycle time (tWC)10 ms
write protectSOFTWARE
M93C86, M93C76, M93C66
M93C56, M93C46
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide)
MICROWIRE® serial access EEPROM
Features
Industry standard MICROWIRE bus
Single supply voltage:
– 4.5 V to 5.5 V for M93Cx6
– 2.5 V to 5.5 V for M93Cx6-W
– 1.8 V to 5.5 V for M93Cx6-R
Dual organization: by word (x16) or byte (x8)
Programming instructions that work on: byte,
word or entire memory
Self-timed programming cycle with auto-erase:
5 ms
READY/BUSY signal during programming
2 MHz clock rate
Sequential read operation
Enhanced ESD/latch-up behavior
More than 1 million write cycles
More than 40 year data retention
Packages
– SO8, TSSOP8, UFDFPN8 packages:
RoHS-compliant and Halogen-free
(ECOPACK2®)
– PDIP8 package:
RoHS-compliant (ECOPACK1®)
TSSOP8 (DW)
169 mil width
SO8 (MN)
150 mil width
PDIP8 (BN)
UFDFPN8 (MB or MC)
2 x 3 mm (MLP)
Table 1.
Part
number
M93C46
Device summary
Memory
size
1 Kbit
Supply
voltage
Part
number
Memory
size
Supply
voltage
Part
number
Memory
size
16 Kbits
2.5 V to 5.5 V M93C66-W
4.5 V to 5.5 V M93C66-R
2 Kbits
2.5 V to 5.5 V M93C76-W
8 Kbits
1.8 V to 5.5 V M93C76-R
4 Kbits
2.5 V to 5.5 V M93C86-W
1.8 V to 5.5 V
2.5 V to 5.5 V
1.8 V to 5.5 V
2.5 V to 5.5 V
Supply
voltage
4.5 V to 5.5 V
4.5 V to 5.5 V M93C66
4.5 V to 5.5 V M93C86
M93C46-W
M93C56
M93C56-W
M93C56-R
October 2011
Doc ID 4997 Rev 12
1/34
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