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M93C76-WDW6TG

Description
64 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8
Categorystorage    storage   
File Size306KB,34 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

M93C76-WDW6TG Overview

64 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8

M93C76-WDW6TG Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeSOIC
package instruction0.169 INCH, ROHS COMPLIANT, TSSOP-8
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
Spare memory width8
Maximum clock frequency (fCLK)2 MHz
Data retention time - minimum40
Durability1000000 Write/Erase Cycles
JESD-30 codeR-PDSO-G8
JESD-609 codee4
length4.4 mm
memory density8192 bi
Memory IC TypeEEPROM
memory width16
Humidity sensitivity level1
Number of functions1
Number of terminals8
word count512 words
character code512
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512X16
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
power supply3/5 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Serial bus typeMICROWIRE
Maximum standby current0.00001 A
Maximum slew rate0.0015 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)2.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
width3 mm
Maximum write cycle time (tWC)5 ms
write protectSOFTWARE
M93C86, M93C76, M93C66
M93C56, M93C46
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide)
MICROWIRE® serial access EEPROM
Features
Industry standard MICROWIRE bus
Single supply voltage:
– 4.5 V to 5.5 V for M93Cx6
– 2.5 V to 5.5 V for M93Cx6-W
– 1.8 V to 5.5 V for M93Cx6-R
Dual organization: by word (x16) or byte (x8)
Programming instructions that work on: byte,
word or entire memory
Self-timed programming cycle with auto-erase:
5 ms
READY/BUSY signal during programming
2 MHz clock rate
Sequential read operation
Enhanced ESD/latch-up behavior
More than 1 million write cycles
More than 40 year data retention
Packages
– SO8, TSSOP8, UFDFPN8 packages:
RoHS-compliant and Halogen-free
(ECOPACK2®)
– PDIP8 package:
RoHS-compliant (ECOPACK1®)
TSSOP8 (DW)
169 mil width
SO8 (MN)
150 mil width
PDIP8 (BN)
UFDFPN8 (MB or MC)
2 x 3 mm (MLP)
Table 1.
Part
number
M93C46
Device summary
Memory
size
1 Kbit
Supply
voltage
Part
number
Memory
size
Supply
voltage
Part
number
Memory
size
16 Kbits
2.5 V to 5.5 V M93C66-W
4.5 V to 5.5 V M93C66-R
2 Kbits
2.5 V to 5.5 V M93C76-W
8 Kbits
1.8 V to 5.5 V M93C76-R
4 Kbits
2.5 V to 5.5 V M93C86-W
1.8 V to 5.5 V
2.5 V to 5.5 V
1.8 V to 5.5 V
2.5 V to 5.5 V
Supply
voltage
4.5 V to 5.5 V
4.5 V to 5.5 V M93C66
4.5 V to 5.5 V M93C86
M93C46-W
M93C56
M93C56-W
M93C56-R
October 2011
Doc ID 4997 Rev 12
1/34
www.st.com
1
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SLC and MLC NAND FLASH driver issues
I see no difference between SLC and MLC DATASHEET, but the driver is correct for SLC page reading and writing, but not for MLC. Does anyone know what the difference is between the driver for MLC and t...
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How to solve the crosstalk between WiFi and Bluetooth?
The AP6216 module used on the board, when Bluetooth is turned on during WiFi connection, the response time of the terminal pinging Baidu changes from tens of milliseconds to thousands of milliseconds,...
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