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BC856- BC860 PNP Epitaxial Silicon Transistor
August 2006
BC856- BC860
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC859, BC860
• Complement to BC846 ... BC850
2
1
3
tm
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings*
Symbol
V
CBO
Collector-Base Voltage
T
a
= 25°C unless otherwise noted
Parameter
: BC856
: BC857/860
: BC858/859
Value
-80
-50
-30
-65
-45
-30
-5
-100
310
150
-65 ~ 150
Units
V
V
V
V
V
V
V
mA
mW
°C
°C
V
CEO
Collector-Emitter Voltage
: BC856
: BC857/860
: BC858/859
V
EBO
I
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics*
T
a
=25°C unless otherwise noted
Symbol
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
NF
Parameter
Collector Cut-off Current
DC Current Gain
Test Condition
V
CB
= -30V, I
E
=0
V
CE
= -5V, I
C
= -2mA
Min.
110
Typ.
Max.
-15
800
Units
nA
Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
: BC856/857/858
: BC859/860
: BC859
: BC860
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -10mA
f=100MHz
V
CB
= -10V, I
E
=0, f=1MHz
V
CE
= -5V, I
C
= -200µA
R
G
=2KΩ, f=1KHz
V
CE
= -5V, I
C
= -200µA
R
G
=2KΩ, f=30~15000Hz
-600
-90
-250
-700
-900
-660
150
-300
-650
mV
mV
mV
mV
-750
-800
mV
mV
MHz
6
2
1
1.2
1.2
10
4
4
2
pF
dB
dB
dB
dB
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BC856- BC860 Rev. B
BC856- BC860 PNP Epitaxial Silicon Transistor
h
FE
Classification
Classification
h
FE
A
110 ~ 220
B
200 ~ 450
C
420 ~ 800
Ordering Information
Device
(note1)
BC856AMTF
BC856BMTF
BC856CMTF
BC857AMTF
BC857BMTF
BC857CMTF
BC858AMTF
BC858BMTF
BC858CMTF
BC859AMTF
BC859BMTF
BC859CMTF
BC860AMTF
BC860BMTF
BC860CMTF
Note1 :
Device Marking
9AA
9AB
9AC
9BA
9BB
9BC
9CA
9CB
9CC
9DA
9DB
9DC
9EA
9EB
9EC
Package
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
Packing Method
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Qty(pcs)
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
3000
Pin Difinitions
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
1.Base 2.Emitter 3.Collector
Affix “-A,-B,-C” means hFE classification.
Affix “-M” means the matte type package.
Affix “-TF” means the tape & reel type packing.
2
BC856- BC860 Rev. B
www.fairchildsemi.com
BC856- BC860 PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
-50
1000
-45
I
C
[mA], COLLECTOR CURRENT
-40
-35
-30
-25
-20
-15
-10
-5
-0
-0
-2
-4
-6
-8
I
B
= - 400
µ
A
I
B
= - 350
µ
A
I
B
= - 250
µ
A
I
B
= - 200
µ
A
I
B
= - 150
µ
A
I
B
= - 100
µ
A
I
B
= - 50
µ
A
V
CE
= - 5V
h
FE
, DC CURRENT GAIN
I
B
= - 300
µ
A
100
-10
-12
-14
-16
-18
-20
10
-0.1
-1
-10
-100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-10
-100
I
C
= 10 I
B
-1
V
BE
(sat)
I
C
[mA], COLLECTOR CURRENT
V
CE
= - 5V
-10
-0.1
-1
V
CE
(sat)
-0.01
-0.1
-0.1
-1
-10
-100
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
f=1MHz I
E
=0
f=1MHz I
E
=0
C
ob
[pF], CAPACITANCE
10
100
1
-1
-10
-100
10
-1
-10
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
3
BC856- BC860 Rev. B
www.fairchildsemi.com
BC856- BC860 PNP Epitaxial Silicon Transistor
Mechanical Dimensions
SOT-23
0.20 MIN
2.40
±0.10
0.40
±0.03
1.30
±0.10
0.45~0.60
0.03~0.10
0.38 REF
0.40
±0.03
0.96~1.14
2.90
±0.10
0.12
–0.023
+0.05
0.95
±0.03
0.95
±0.03
1.90
±0.03
0.508REF
0.97REF
Dimensions in Millimeters
4
BC856- BC860 Rev. B
www.fairchildsemi.com
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