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BCV26_NL

Description
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon,
CategoryDiscrete semiconductor    The transistor   
File Size212KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BCV26_NL Overview

Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon,

BCV26_NL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)1.2 A
Collector-emitter maximum voltage30 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)20000
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)220 MHz
Base Number Matches1
BCV26
BCV26
C
E
SOT-23
Mark: FD
B
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
30
40
10
1.2
-55 to +150
Units
V
V
V
A
°C
3
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
*BCV26
350
2.8
357
Units
mW
mW/°C
°C/W
*
Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997
Fairchild Semiconductor Corporation
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