TLP570,TLP571
TOSHIBA Photocoupler
GaAs IRed & Photo−Transistor
TLP570,TLP571
Programmable Controllers
AC / DC−Input Module
Solid State Relay
The TOSHIBA TLP570 and TLP571 consist of a darlington connected
photo−transistor optically coupled to a gallium arsenide infrared
emitting diode in a six lead plastic DIP package.
TLP570 is no−base internal connection for high−EMI environments.
Collector−emitter voltage: 35V (min.)
Current transfer ratio: 1000% (min.)
Isolation voltage: 2500Vrms (min.)
UL recognized: UL1577, file no. E67349
Unit in mm
Pin Configurations
(top view)
TOSHIBA
11−7A8
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2007-10-01
TLP570,TLP571
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Forward current derating (Ta
≥
25°C)
LED
Peak forward current (100μs pulse, 100pps)
Reverse voltage
Junction temperature
Collector−emitter voltage
Collector−base voltage (TLP571)
Emitter−collector voltage
Detector
Emitter−base voltage (TLP571)
Collector current
Power dissipation
Power dissipation derating (Ta
≥
25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10s)
Total package power dissipation
Total package power dissipation derating (Ta
≥
25°C)
Isolation voltage (AC, 1 min., R.H.≤ 60%)
(Note 1)
Symbol
I
F
ΔI
F
/ °C
I
FP
V
R
T
j
V
CEO
V
CBO
V
ECO
V
EBO
I
C
P
C
ΔP
C
/ °C
T
j
T
stg
T
opr
T
sold
P
T
ΔP
T
/ °C
BV
S
Rating
70
−0.7
1
5
125
35
80
7
7
150
150
−1.5
125
−55~125
−55~100
260
250
−2.5
2500
Unit
mA
mA / °C
A
V
°C
V
V
V
V
mA
mW
mW / °C
°C
°C
°C
°C
mW
mW / °C
V
rms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1)
Device considered a two terminal: Pins1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together.
Recommends Operating Conditions
Characteristic
Supply voltage
Forward current
Collector current
Operating temperature
Symbol
V
CC
I
F
I
C
T
opr
Min.
―
―
―
−25
Typ.
5
16
―
―
Max.
24
25
50
85
Unit
V
mA
mA
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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2007-10-01
TLP570,TLP571
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Reverse current
Capacitance
Collector−emitter
breakdown voltage
Emitter−collector
breakdown voltage
Collector−base
breakdown voltage (TLP571)
Detector
Emitter−base
breakdown voltage (TLP571)
Collector dark current
Symbol
V
F
I
R
C
T
V
(BR)CEO
V
(BR)ECO
V
(BR)CBO
V
(BR)EBO
I
CEO
I
CER
I
CBO
h
FE
C
CE
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0, f = 1 MHz
I
C
= 1 mA
I
E
= 0.1 mA
I
C
= 0.1 mA
I
E
= 0.1 mA
V
CE
= 24 V
V
CE
= 24 V, Ta = 85°C
V
CE
= 24 V, Ta = 85°C
R
BE
= 10 MΩ
V
CB
= 10 V
V
CE
= 5 V, I
C
= 10 mA
V = 0, f = 1 MHz
Min.
1.0
―
―
35
7
80
7
―
―
―
―
―
―
Typ.
1.15
―
30
―
―
―
―
10
―
0.5
0.01
50k
10
Max.
1.3
10
―
―
―
―
―
200
300
10
―
―
―
Unit
V
μA
pF
V
V
V
V
nA
μA
μA
nA
―
pF
Collector dark current (TLP571)
Collector dark current (TLP571)
DC forward current gain (TLP571)
Capacitance (collector to emitter)
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Base photo−current (TLP571)
Collector−emitter
saturation voltage
Symbol
I
C
/ I
F
I
C
/ I
F (sat)
I
PB
V
CE (sat)
Test Condition
I
F
= 1 mA, V
CE
= 1 V
I
F
= 10 mA, V
CE
= 1 V
I
F
= 1 mA, V
CB
= 1 V
I
C
= 10 mA, I
F
= 1 mA
I
C
= 100 mA, I
F
= 10 mA
MIn.
1000
500
―
―
0.3
Typ.
2000
―
2
―
―
Max.
―
―
―
1.0
1.2
Unit
%
%
μA
V
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