T10A series Sibod
™
Sibod
™
T10A series
FEATURES
•
Glass passivated junction
•
High current diverting capability (150A, 8x20µs)
•
Low capacitance, less than 100pF
•
UL recognized
•
Automatic reset
•
Does not degrade
0.76
0.86
APPLICATION
•
Bi-directional device for telephone and line card protection
25.4 min
ELECTRICAL CHARACTERISTICS (Tamb = +25°C)
SYMBOL
V
RM
V
BR
I
H
V
R
PARAMETER
Stand-off Voltage
Breakdown Voltage
Holding Current
Continuous Reverse Voltage.
6.10
6.47
3.05
3.25
ABSOLUTE RATINGS (limiting values) ( Tj = + 25°C )L = 10mm
SYMBOL
PARAMETER
Power Dissipation on Infinite Heatsink
Ipp
Peak Pulse Current
Tamb = 50°C
10x1000µsec
10/700 1.5KV
8-20 us expo
tp = 20 ms
Non repetitive
VALUE
1.7
50
37.5
100
30
100
-40 to 150
150
230
UNIT
W
A
25.4 min
A
A/uS
°C
°C
°C
All dimensions in mm.
I
TSM
di/dt
Tstg
Tj
T
L
Non Repetitive Surge Peak on-state Current
Critical Rate of Rise of on-state Current
Storage and Operating Junction Temperature Range
Maximum Lead Temperature for soldering during 10s at
4mm from Case
THERMAL RESISTANCES
SYMBOL
Rth(j-i)
Rth(j-a)
PARAMETER
Junction-leads on Infinite Heatsink
Junction-ambient on Printed Circuit
L = 10mm
VALUE
60
100
UNIT
°C/W
°C/W
All parameters are tested using Fet Test™ Model 3600
DEVICE
TYPE
I
RM
@ V
RM
max
µA
T10A62
T10A68
T10A100
T10A120
T10A130
T10A180
T10A200
T10A220
T10A240
T10A270
2
2
2
2
2
2
2
2
2
2
V
56
61
90
108
117
162
180
198
216
243
µA
50
50
50
50
50
50
50
50
50
50
I
R
@ V
R
max
V
62
68
100
120
130
180
200
220
240
270
V
82
90
133
160
173
240
267
293
320
360
V
BO
@ I
BO
max
mA
800
800
800
800
800
800
800
800
800
800
I
H
min
mA
150
150
150
150
150
150
150
150
150
150
ORDERING
INFORMATION
T10A
Voltage
Packaging Option
B = Bulk (1000 pcs)
T = Tape and reeled (5000 pcs)
All products are sold to the commercial specifications shown, for any additional reliability testing or extended parameters, please consult the factory.
contact semitron on: telephone:
+44 (0)1793 724000
fax:
+44 (0)1793 720401
43
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