™
T10B series Sibod
™
T10B series Sibod
FEATURES
•
Glass passivated junction
•
High current diverting capability, 250A
•
Low capacitance, less than 200pF
•
UL recognised
•
Automatic reset
•
Does not degrade
Ø1.016±0.050
APPLICATION
•
Bi-directional device for telephone and line card protection
25.4 min
ELECTRICAL CHARACTERISTICS (Tamb = +25°C)
SYMBOL
V
RM
V
BR
I
H
V
R
PARAMETER
Stand-off Voltage
Breakdown Voltage
Holding Current
Continuous Reverse Voltage.
+0.127
9.400
-0.254
+0.127
Ø5.080
-0.254
ABSOLUTE RATINGS (limiting values) ( Tj = + 25°C )L = 10mm
SYMBOL
P
Ipp
PARAMETER
Power Dissipation on Infinite Heatsink
Peak Pulse Current
Tamb = 50°C
10x1000µsec
10/700 1.5KV
8-20 us expo
tp = 20 ms
Non repetitive
VALUE
5
100
125
250
50
100
-40 to 150
150
230
UNIT
W
A
25.4 min
Itsm
di/dt
T stg
Tj
Tl
Non Repetitive Surge Peak on state Current
Critical Rate of Rise of on-state Current
Storage and Operating Junction Temperature Range
A
A/uS
°C
°C
°C
All Dimensions in mm
Maximum Lead Temperature for soldering During 10s at
4mm from Case
THERMAL RESISTANCES
SYMBOL
Rth(j-i)
Rth(j-a)
PARAMETER
Junction-leads on Infinite Heatsink
Junction-ambient on Printed Circuit
L = 10mm
VALUE
20
75
UNIT
°C/W
°C/W
All parameters are tested using Fet Test™ Model 3600
DEVICE
TYPE
I
RM
@ V
RM
max
µA
T10B35
T10B65
T10B120
T10B140
T10B200
T10B230
T10B270
2
2
2
2
2
2
2
V
32
55
110
120
170
200
230
µA
50
50
50
50
50
50
50
I
R
@ V
R
max
V
35
65
120
140
200
230
270
V
55
80
160
200
265
300
350
V
BO
@ I
BO
max
mA
800
800
800
800
800
800
800
I
H
min
mA
150
150
150
150
150
150
150
C
typ
pF
180
160
140
140
130
120
120
ORDERING
INFORMATION
T10B
Voltage
Packaging Option
B = Bulk (500 pcs)
T = Tape and reeled (1500 pcs)
All products are sold to the commercial specifications shown, for any additional reliability testing or extended parameters, please consult the factory.
44
contact semitron on: telephone:
+44 (0)1793 724000
fax:
+44 (0)1793 720401
MCU
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