MA4AGSW8-2 datasheet, PDF - EEWORLD Datasheet

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MA4AGSW8-2: Description50 MHz - 40000 MHz RF/MICROWAVE SGL POLE EIGHT THROW SWITCH, 2.3 dB INSERTION LOSS; CategoryWireless rf/communication Radio frequency and microwave; File Size115KB，6 Pages; ManufacturerMACOM; Websitehttp://www.macom.com

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50 MHz - 40000 MHz RF/MICROWAVE SGL POLE EIGHT THROW SWITCH, 2.3 dB INSERTION LOSS

MA4AGSW8-2 Parametric

Parameter Name	Attribute value
Maker	MACOM
Reach Compliance Code	compli

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MA4AGSW8-2

SP8T AlGaAs PIN Diode Switch

Rev. V2

FEATURES

•

Specified Performance : 50 MHz to 40 GHz

Operational Performance: 50 MHz to 50 GHz

2.0 dB Typical Insertion Loss at 40 GHz

30 dB Typical Isolation at 40 GHz thru 3 Diodes

22 dB Typical Isolation at 40 GHz thru 2 Diodes

Low Current Consumption

•

10 mA for low loss state

•

0 Volts for Isolation state

M/A-COM’s Patented AlGaAs Hetero-Junction

Anode Technology.

Silicon Nitride Passivation

BCB Impact Protection

RoHS Compliant

CHIP LAYOUT

DESCRIPTION

M/A-COM’s MA4AGSW8-2 is an Aluminum-Gallium-

Arsenide (AlGaAs) anode enhanced, SP8T, PIN

diode series switch. Operation is accomplished with

10 mA applied to the low loss port and 0V for the

isolated ports. M/A-COM’s Technology Solutions

AlGaAs process utilizes a patented hetero-junction

technology which produces lower insertion loss than

conventional GaAs devices. These devices are

fabricated on an OMCVD epitaxial wafer using a

process designed for high device uniformity and

extremely low parasitics. The diodes used have low

series resistance, (3

Ω)

, low capacitance (20 fF) , and

fast switching speed (20 nS). The MA4AGSW8-2

device is fully passivated with silicon nitride, and has

an extra layer of polyamide for added scratch and

impact protection. This protective coating prevents

damage to the diode junction and anode air bridges

during handling and assembly. External RF to DC

bias networks which are optimized for the particular

operating band of interest are required.

Absolute Maximum Ratings

AMB

= +25°C

(Unless Otherwise Noted)

Parameter

Absolute Maximum

APPLICATIONS

The low capacitance of the internal PIN diodes makes

this switch ideal for use in many microwave

multi-throw switch designs. The low series resistance

of the diodes reduces the insertion loss at microwave

millimeter-wave frequencies. These AlGaAs PIN

switches can be used as switching arrays on radar

systems, optical switching networks, instrumentation,

and other wideband multi-throw switch assemblies.

D.C. Reverse Voltage

Operating Temperature

Storage Temperature

Bias Current

25V

-55°C to +125°C

-65°C to +150°C

±30mA

Note:

1. Operation of this device above any one of these

parameters may cause permanent damage.

ADVANCED:

Data Sheets contain information regarding a product M/A-COM Technology Solutions

•

North America

Tel: 800.366.2266 •

Europe

Tel: +353.21.244.6400

is considering for development. Performance is based on target specifications, simulated results,

•

India

Tel: +91.80.43537383

•

China

Tel: +86.21.2407.1588

and/or prototype measurements. Commitment to develop is not guaranteed.

Visit www.macomtech.com for additional data sheets and product information.

PRELIMINARY:

Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

Commitment to produce in volume is not guaranteed.

changes to the product(s) or information contained herein without notice.

MA4AGSW8-2

SP8T AlGaAs PIN Diode Switch

Rev. V2

OPERATION OF THE MA4AGSW8-2

The MA4AGSW8-2 switch is designed to operate in systems where lower D.C. current consumption and D.C. operating

voltages are required. The application of either +10 mA or –10 mA DC bias current to the selected port will provide the low

insertion loss state. Typically this low loss, “ ON ” bias voltage through (3) series diodes is | 4.5 Volts | maximum. All Isolated

Ports can be set to 0V at 0 mA, or the application of | 5 V | back bias at 0 mA will improve the isolation and switching speed.

RF to DC bias networks, ( such as the MA4BN18-40 ) are required on all RF Ports.

A simple single supply, +5V, PIN Diode TTL Gate Driver can be used to supply current for loss or 0V back bias for isolation

to switch the individual RF Ports. In this bias scheme, +5 V through a current limiting resistor would be applied at the

common port and each RF port would be connected to a TTL Gate. Low loss would occur when the Selected Gate Voltage is

0.5 V @ + 10 mA , “ TTL 0 ” and Isolation would occur when the Selected Gate Voltage is +5V @ 0mA

( 0 V Back Bias ), “ TTL 1 ”.

For faster switching speeds ( < 20 nS ) , a +/- 5V , PIN Diode TTL Driver should be employed to help remove the diode

stored charge with back bias. In this case, the common port is connected to D.C. Ground. Insertion Loss is achieved with

–10 mA @ – 4.5 V and Isolation is accomplished by applying +5V @ 0mA to the selected RF ports respectively.

ADVANCED:

Data Sheets contain information regarding a product M/A-COM Technology Solutions

•

North America

Tel: 800.366.2266 •

Europe

Tel: +353.21.244.6400

is considering for development. Performance is based on target specifications, simulated results,

•

India

Tel: +91.80.43537383

•

China

Tel: +86.21.2407.1588

and/or prototype measurements. Commitment to develop is not guaranteed.

Visit www.macomtech.com for additional data sheets and product information.

PRELIMINARY:

Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

Commitment to produce in volume is not guaranteed.

changes to the product(s) or information contained herein without notice.

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