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MA4E2514L

Description
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
CategoryDiscrete semiconductor    diode   
File Size95KB,4 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Download Datasheet Parametric Compare View All

MA4E2514L Overview

SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE

MA4E2514L Parametric

Parameter NameAttribute value
MakerMACOM
Reach Compliance Codeunknow
ECCN codeEAR99
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum operating temperature175 °C
surface mountYES
MA4E2514 Series
SURMOUNT
TM
Low and Medium Barrier Silicon
Schottky Diodes: Tee Pair
Features
Extremely Low Parasitic Capitance and Induc-
tance
Surface Mountable in Microwave Circuits, No
Wirebonds Required
Rugged HMIC Construction with Polyimide
Scratch Protection
Reliable, Multilayer Metalization with a Diffusion
Barrier, 100 % Stabilization Bake (300°C, 16
hours)
Lower Susceptibility to ESD Damage
A
M/A-COM Products
Rev. V5
B
Description
The MA4E2514 SURMOUNT
TM
Diode Tee Series
are Silicon Low, and Medium Barrier Schottky De-
vices fabricated with the patented Heterolithic Mi-
crowave Integrated Circuit (HMIC) process. HMIC
Circuits consist of Silicon pedestals which form di-
odes or via conductors embedded in glass dielec-
tric, which acts as the low dispersion, low loss mi-
crostrip transmission medium. The combination of
silicon and glass allows HMIC devices to have ex-
cellent loss and power dissipation characteristics in
a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of
a beam lead device coupled with the superior me-
chanical performance of a chip. The Surmount
structure employs very low resistance silicon vias
to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic dis-
charge than conventional beam lead Schottky di-
odes.
The multi-layer metallization employed in the fabri-
cation of the Surmount Schottky junctions includes
a platinum diffusion barrier, which permits all de-
vices to be subjected to a 16-hour non-operating
stabilization bake at 300°C.
The “0505” outline allows for Surface Mount place-
ment and multi-functional polarity orientations.
D
E
D
C
Case Style 1116
DIM
A
B
C
D Sq.
E
INCHES
MIN.
0.0445
0.0445
0.0040
0.0128
0.0128
MILLIMETERS
MIN.
1.130
1.130
0.102
0.325
0.325
MAX.
0.0465
0.0465
0.0080
0.0148
0.0148
MAX.
1.180
1.180
0.203
0.375
0.375
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
volume is not guaranteed.
information contained herein without notice.

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