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BYX100G

Description
DIODE 0.39 A, 11000 V, SILICON, SIGNAL DIODE, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size26KB,1 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BYX100G Overview

DIODE 0.39 A, 11000 V, SILICON, SIGNAL DIODE, Signal Diode

BYX100G Parametric

Parameter NameAttribute value
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum output current0.39 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage11000 V
Maximum reverse recovery time0.5 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
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