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BAT74
Schottky barrier double diode
Rev. 03 — 19 April 2010
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier double diode with an integrated guard ring for stress protection.
Two electrically isolated Schottky barrier diodes, encapsulated in a small SOT143B
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Low forward voltage
Guard-ring protected
Small SMD plastic package
1.3 Applications
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes
1.4 Quick reference data
Table 1.
Symbol
Per diode
I
F
V
R
V
F
forward current
reverse voltage
forward voltage
I
F
= 100 mA
-
-
-
-
-
-
200
30
800
mA
V
mV
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning
Description
cathode (diode 1)
cathode (diode 2)
anode (diode 2)
anode (diode 1)
1
2
1
2
006aaa434
Simplified outline
4
3
Graphic symbol
4
3
NXP Semiconductors
BAT74
Schottky barrier double diode
3. Ordering information
Table 3.
Ordering information
Package
Name
BAT74
-
Description
plastic surface-mounted package; 4 leads
Version
SOT143B
Type number
4. Marking
Table 4.
BAT74
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
*L4
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
R
I
F
I
FRM
I
FSM
P
tot
T
j
T
amb
T
stg
V
R
I
F
I
FRM
[1]
[2]
Parameter
reverse voltage
forward current
repetitive peak forward
current
Conditions
Min
-
-
Max
30
200
300
600
230
125
+125
+150
30
60
110
200
Unit
V
mA
mA
mA
mW
°C
°C
°C
V
V
mA
mA
t
p
≤
1 s;
δ ≤
0.5
-
-
-
-
−65
−65
-
[1]
non-repetitive peak forward t
p
< 10 ms
current
total power dissipation
junction temperature
ambient temperature
storage temperature
reverse voltage
forward current
repetitive peak forward
current
t
p
≤
1 s;
δ ≤
0.5
[2]
T
amb
≤
25
°C
Double diode operation
-
-
-
Series connection.
If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one
diode is in reverse operation and the other is in forward operation at the same moment, total device current
is max. 200 mA.
BAT74_3
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 19 April 2010
2 of 10
NXP Semiconductors
BAT74
Schottky barrier double diode
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
Min
-
Typ
-
Max
500
Unit
K/W
Refer to SOT143B standard mounting conditions.
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
C
d
t
rr
[1]
[2]
[3]
[1]
Parameter
Conditions
Min
-
-
-
-
-
[2]
Typ
-
-
-
-
-
-
-
-
Max
240
320
400
500
800
2
10
5
Unit
mV
mV
mV
mV
mV
μA
pF
ns
reverse current
diode capacitance
reverse recovery
time
V
R
= 25 V
V
R
= 1 V; f = 1 MHz
-
-
-
[3]
Temperature coefficient of forward voltage
−0.6
%/K.
Pulse test: t
p
= 300
μs; δ
= 0.02.
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
BAT74_3
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 19 April 2010
3 of 10
NXP Semiconductors
BAT74
Schottky barrier double diode
10
3
I
F
(mA)
10
2
(1) (2) (3)
msa892
10
3
I
R
(μA)
10
2
(2)
(1)
msa893
10
10
1
(1)
(2) (3)
1
(3)
10
−1
0
0.4
0.8
V
F
(V)
1.2
10
−1
0
10
20
V
R
(V)
30
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
Fig 1.
Forward current as a function of forward
voltage; typical values
msa891
Fig 2.
Reverse current as a function of reverse
voltage; typical values
msa894
15
C
d
(pF)
300
P
tot
(mW)
10
200
5
100
0
0
10
20
V
R
(V)
30
0
0
75
T
amb
(°C)
150
f = 1 MHz; T
amb
= 25
°C
Standard footprint
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig 4.
Power derating curve
BAT74_3
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 19 April 2010
4 of 10
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