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VS-ST303C10CDJ3L

Description
Silicon Controlled Rectifier,
CategoryAnalog mixed-signal IC    Trigger device   
File Size309KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

VS-ST303C10CDJ3L Overview

Silicon Controlled Rectifier,

VS-ST303C10CDJ3L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionDISK BUTTON, O-CEDB-N2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH SPEED
ConfigurationSINGLE
Maximum DC gate trigger current200 mA
JEDEC-95 codeTO-200AB
JESD-30 codeO-CEDB-N2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum rms on-state current1180 A
Off-state repetitive peak voltage1000 V
Repeated peak reverse voltage1000 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Base Number Matches1
VS-ST303C Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(PUK Version), 620 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• International standard case TO-200AB (E-PUK)
TO-200AB (E-PUK)
• High surge current capability
• Low thermal impedance
• High speed performance
PRODUCT SUMMARY
Package
Diode variation
I
T(AV)
V
DRM
/V
RRM
V
TM
I
TSM
at 50 Hz
I
TSM
at 60 Hz
I
GT
T
C
/T
hs
TO-200AB (E-PUK)
Single SCR
620 A
400 V, 800 V, 1000 V, 1200 V
2.16 V
7950 A
8320 A
200 mA
55 °C
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Note
• t
q
= 10 μs to 20 μs for 400 V to 800 V devices
t
q
= 15 μs to 30 μs for 1000 V to 1200 V devices
Range
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
620
55
1180
25
7950
8320
316
289
400 to 1200
10 to 30
-40 to 125
UNITS
A
°C
A
°C
A
kA
2
s
V
μs
°C
Revision: 20-Dec-13
Document Number: 94373
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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