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MADS-002545-1307MT

Description
SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
CategoryDiscrete semiconductor    diode   
File Size57KB,3 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Download Datasheet Parametric Compare View All

MADS-002545-1307MT Overview

SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE

MADS-002545-1307MT Parametric

Parameter NameAttribute value
MakerMACOM
package instructionS-XBCC-N4
Contacts4
Manufacturer packaging codeCASE 1307
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationCROSSOVER RING, 4 ELEMENTS
Maximum diode capacitance0.22 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandKU BAND
JESD-30 codeS-XBCC-N4
Number of components4
Number of terminals4
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formCHIP CARRIER
Maximum power dissipation0.05 W
Pulse input maximum power0.1 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationBOTTOM
Schottky barrier typeMEDIUM BARRIER
MADS-002545-1307 Series
SURMOUNT
TM
Schottky Diodes:
Cross-Over Quad Series Ultra-Small 600x600um Surface-Mount Chip
Features
Ultra Low Parasitic Capacitance and Inductance
Surface Mountable in Microwave Circuits , No
Wire bonds Required
Rugged HMIC Construction with Polyimide
Scratch Protection
Reliable, Multilayer Metallization with a Diffusion
Barrier, 100% Stabilization Bake (300 °C, 16 hours)
Lower Susceptibility to ESD Damage
Topview
M/A-COM Products
Rev. V3
A
B
Description and Applications
The MADS-002545-1307 Series Surmount
Silicon Schottky Cross-Over Quad Diodes are fabri-
cated with the patented Heterolithic Microwave Inte-
grated Circuit (HMIC) process. HMIC circuits consist of
Silicon pedestals which form diodes or via conductors em-
bedded in a glass dielectric, which acts as the low disper-
sion, low loss, microstrip transmission medium. The combi-
nation of silicon and glass allows HMIC devices to have
excellent loss and power dissipation characteristics in a low
profile, reliable device.
These Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of a
beam lead device coupled with the superior mechanical per-
formance of a chip. The Surmount structure employs very low
resistance silicon vias to connect the Schottky contacts to the
metalized mounting pads on the bottom surface of the
chip. These devices are reliable, repeatable, and a
lower cost performance solution to conventional de-
vices. They have lower susceptibility to electrostatic
discharge than conventional beam lead Schottky di-
odes.
The multi-layer metallization employed in the fabrication of the
Surmount Schottky junctions includes a platinum diffu-
sion barrier, which permits all devices to be subjected to a 16-
hour non-operating stabilization bake at 300°C.
The “ 0202 ” outline allows for Surface Mount placement and
multi- functional polarity orientations. The MADS-002545-1307
Series is recommended for use in microwave circuits through
Ku band frequencies for lower power applications such as mix-
ers, sub-harmonic mixers, detectors and limiters. The HMIC
construction facilitates the direct replacement of more fragile
beam lead diodes with the corresponding Surmount diode,
which can be connected to a hard or soft substrate circuit with
solder.
C
D
E
Sideview
D
Case Style 1307
MADS-002545-1307
Equivalent Circuit
Dim
Min.
A
B
C
D Sq.
E Sq.
Inches
Max.
0.025
0.025
0.008
0.009
0.009
0.023
0.023
0.004
0.007
0.007
Millimeters
Min.
Max.
0.575
0.575
0.102
0.175
0.175
0.625
0.625
0.203
0.225
0.225
1
North America
Tel: 800.366.2266 / Fax: 978.366.2266
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

MADS-002545-1307MT Related Products

MADS-002545-1307MT MADS-002545-1307 MADS-002545-1307H MADS-002545-1307HT MADS-002545-1307LT MADS-002545-1307LG MADS-002545-1307L MADS-002545-1307M MADS-002545-1307HG
Description SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE Mixer Diode, High Barrier, KU Band, Silicon, 0.60 X 0.60 MM, ULTRA SMALL, CASE 1307, 4 PIN Mixer Diode, Low Barrier, KU Band, Silicon, 0.60 X 0.60 MM, ULTRA SMALL, CASE 1307, 4 PIN Mixer Diode, Low Barrier, KU Band, Silicon, 0.60 X 0.60 MM, ULTRA SMALL, CASE 1307, 4 PIN SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE Mixer Diode, High Barrier, KU Band, Silicon, 0.60 X 0.60 MM, ULTRA SMALL, CASE 1307, 4 PIN

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