BLC6G20-75; BLC6G20LS-75
UHF power LDMOS transistor
Rev. 01 — 30 January 2006
Objective data sheet
1. Product profile
1.1 General description
75 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1:
Typical performance
RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation
CW
GSM EDGE
f
(MHz)
1930 to 1990
1930 to 1990
V
DS
P
L(AV)
(V)
28
28
(W)
63
29.5
G
p
(dB)
19
19
η
D
(%)
52
ACPR
400
ACPR
600
EVM
rms
(dBc)
-
(dBc)
-
−72
(%)
-
1.5
38.5
−62.5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s
Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply
voltage of 28 V and an I
Dq
of 550 mA:
x
Output power = 29.5 W (AV)
x
Gain = 19 dB
x
Efficiency = 38.5 %
x
ACPR
400
=
−62.5
dBc
x
ACPR
600
=
−72
dBc
x
EVM
rms
= 1.5 %
s
Easy power control
s
Integrated ESD protection
s
Excellent ruggedness
s
High efficiency
s
Excellent thermal stability
s
Designed for broadband operation (1800 MHz to 2000 MHz)
s
Internally matched for ease of use
Philips Semiconductors
BLC6G20-75; BLC6G20LS-75
UHF power LDMOS transistor
1.3 Applications
s
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 1800 MHz to 2000 MHz frequency range.
2. Pinning information
Table 2:
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Symbol
BLC6G20-75 (SOT895-1)
1
3
2
2
3
sym112
1
BLC6G20LS-75 (SOT896-1)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym112
[1]
Connected to flange
3. Ordering information
Table 3:
Ordering information
Package
Name
BLC6G20-75
BLC6G20LS-75
-
-
Description
plastic flanged cavity package; 2 mounting slots; 2 leads
plastic earless flanged cavity package; 2 leads
Version
SOT895-1
SOT896-1
Type number
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
−0.5
-
−65
-
Max
65
+13
+150
225
Unit
V
V
°C
°C
<tbd>
A
BLC6G20-75_6G20LS-75_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 30 January 2006
2 of 9
Philips Semiconductors
BLC6G20-75; BLC6G20LS-75
UHF power LDMOS transistor
5. Thermal characteristics
Table 5:
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance
from junction to case
Conditions
Type
Min
Typ
Max
Unit
T
case
= 80
°C;
BLC6G20-75
P
L
= 75 W
BLC6G20LS-75
<tbd> <tbd> <tbd>
K/W
<tbd> <tbd> <tbd>
K/W
6. Characteristics
Table 6:
Characteristics
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
V
DS
= 10 V; I
D
= 100 mA
V
DS
= 28 V; I
D
= 550 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 13 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 5 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 3.5 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
Min
65
Typ
-
Max
-
Unit
V
<tbd>
2
-
15.5
-
-
-
-
-
18
-
7
0.15
1.6
<tbd>
V
3
-
300
-
µA
A
nA
S
<tbd> <tbd> <tbd>
V
0.185
Ω
-
pF
7. Application information
Table 7:
Application information
Mode of operation: GSM EDGE; f = 1930 MHz and 1990 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 550 mA; T
case
= 25
°
C; unless otherwise specified; in a class-AB production test circuit
Symbol
P
L(AV)
G
p
IRL
η
D
Parameter
average output power
power gain
input return loss
drain efficiency
P
L(AV)
= 29.5 W
P
L(AV)
= 29.5 W
P
L(AV)
= 29.5 W
Conditions
Min
-
-
-
-
-
-
Typ
29.5
−10
Max
-
20
−7
-
−70
2.3
8
Unit
W
dB
dB
%
dBc
dBc
%
%
17.5 19
36.5 38.5
−72
1.5
4.8
ACPR
400
adjacent channel power ratio (400 kHz) P
L(AV)
= 29.5 W
ACPR
600
adjacent channel power ratio (600 kHz) P
L(AV)
= 29.5 W
EVM
rms
EVM
M
RMS EDGE signal distortion error
peak EDGE signal distortion error
P
L(AV)
= 29.5 W
P
L(AV)
= 29.5 W
−62.2 −60
7.1 Ruggedness in class-AB operation
The BLC6G20-75 and BLC6G20LS-75 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 550 mA; P
L
= 75 W (CW); f = 1990 MHz.
BLC6G20-75_6G20LS-75_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 30 January 2006
3 of 9
Philips Semiconductors
BLC6G20-75; BLC6G20LS-75
UHF power LDMOS transistor
8. Package outline
Plastic flanged cavity package; 2 mounting slots; 2 leads
SOT895-1
D
F
A
D
1
U
1
q
B
C
c
1
L
w1
M
A
M
B
M
H
U
2
3
p
E
1
E
A
2
b
w2
M
C
M
Q
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
inches
A
4.1
3.3
b
12.83
12.57
c
0.17
0.14
D
19.9
19.7
D
1
20.42
20.12
E
9.53
9.27
E
1
9.78
9.53
F
1.14
0.89
H
19.94
18.92
L
5.3
4.5
p
3.38
3.12
Q
1.75
1.50
q
27.94
U
1
34.16
33.91
U
2
9.91
9.65
w
1
0.25
0.01
w
2
0.6
0.023
1.345 0.390
0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.133 0.069
1.100
1.335 0.380
0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.123 0.059
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
SOT895-1
ISSUE DATE
05-06-22
05-06-28
Fig 1. Package outline SOT895-1
BLC6G20-75_6G20LS-75_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 30 January 2006
4 of 9
Philips Semiconductors
BLC6G20-75; BLC6G20LS-75
UHF power LDMOS transistor
Plastic earless flanged cavity package; 2 leads
SOT896-1
D
F
A
3
D
1
D
U
1
1
L
c
H
U
2
E
1
E
2
b
w2
M
D
M
Q
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
inches
A
4.1
3.3
b
12.83
12.57
c
0.17
0.14
D
19.9
19.7
D
1
20.42
20.12
E
9.53
9.27
E
1
9.78
9.53
F
1.14
0.89
H
19.94
18.92
L
5.3
4.5
Q
1.75
1.50
U
1
20.70
20.45
U
2
9.91
9.65
w
2
0.6
0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.069 0.815 0.390
0.023
0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.059 0.805 0.380
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
SOT896-1
ISSUE DATE
05-06-22
05-06-28
Fig 2. Package outline SOT896-1
BLC6G20-75_6G20LS-75_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 30 January 2006
5 of 9
京公网安备 11010802033920号
EEWORLD
