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BLC6G22LS-100

Description
TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, PLASTIC, SOT-896-1, 2 PIN, FET RF Power
CategoryDiscrete semiconductor    The transistor   
File Size54KB,9 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BLC6G22LS-100 Overview

TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, PLASTIC, SOT-896-1, 2 PIN, FET RF Power

BLC6G22LS-100 Parametric

Parameter NameAttribute value
Parts packaging codeSOT
package instructionPLASTIC, SOT-896-1, 2 PIN
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH EFFICIENCY
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandS BAND
JESD-30 codeR-PDFM-F2
JESD-609 codee3
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature225 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
BLC6G22-100; BLC6G22LS-100
UHF power LDMOS transistor
Rev. 01 — 30 January 2006
Objective data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1:
Typical performance
RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
V
DS
(V)
28
P
L(AV)
(W)
25
G
p
(dB)
18
η
D
(%)
32
IMD3
(dBc)
−37
[1]
ACPR
(dBc)
−40
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s
Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an I
Dq
of 950 mA:
x
Output power = 25 W (AV)
x
Gain = 18 dB
x
Efficiency = 32 %
x
IMD3 =
−37
dBc
x
ACPR =
−40
dBc
s
Easy power control
s
Integrated ESD protection
s
Excellent ruggedness
s
High efficiency
s
Excellent thermal stability
s
Designed for broadband operation (2000 MHz to 2200 MHz)
s
Internally matched for ease of use

BLC6G22LS-100 Related Products

BLC6G22LS-100 BLC6G22-100
Description TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, PLASTIC, SOT-896-1, 2 PIN, FET RF Power TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, PLASTIC, SOT-895-1, 2 PIN, FET RF Power
Parts packaging code SOT SOT
package instruction PLASTIC, SOT-896-1, 2 PIN PLASTIC, SOT-895-1, 2 PIN
Contacts 2 2
Reach Compliance Code compliant unknown
ECCN code EAR99 EAR99
Other features HIGH EFFICIENCY HIGH EFFICIENCY
Shell connection SOURCE SOURCE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 65 V 65 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band S BAND S BAND
JESD-30 code R-PDFM-F2 R-PDFM-F2
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 225 °C 225 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface TIN TIN
Terminal form FLAT FLAT
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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