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BLF543

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size472KB,11 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

BLF543 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

BLF543 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)2 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum operating temperature200 °C
Polarity/channel typeN-CHANNEL
Base Number Matches1
This Material Copyrighted By Its Respective Manufacturer
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