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BLF6G20-180P

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size42KB,8 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

BLF6G20-180P Overview

Transistor

BLF6G20-180P Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
BLF6G20-180P
UHF power LDMOS transistor
Rev. 01 — 19 April 2006
Objective data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1:
Typical performance
RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
1805 to 1880
V
DS
(V)
32
P
L(AV)
(W)
50
G
p
(dB)
17.5
η
D
(%)
27.5
ACPR
(dBc)
−35
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a
supply voltage of 32 V and an I
Dq
of 1600 mA:
N
Average output power = 50 W
N
Power gain = 17.5 dB (typ)
N
Efficiency = 27.5 %
N
ACPR =
−35
dBc
I
Easy power control
I
Integrated ESD protection
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (1800 MHz to 2000 MHz)
I
Internally matched for ease of use
1.3 Applications
I
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1800 MHz to 2000 MHz frequency range.
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