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BTA140-800

Description
TRIAC, 800V V(DRM), 25A I(T)RMS,
CategoryAnalog mixed-signal IC    Trigger device   
File Size48KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

BTA140-800 Overview

TRIAC, 800V V(DRM), 25A I(T)RMS,

BTA140-800 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknown
Critical rise rate of minimum off-state voltage100 V/us
Maximum DC gate trigger current35 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current30 mA
JESD-609 codee3
Maximum leakage current0.5 mA
Maximum on-state voltage1.5 V
Maximum operating temperature120 °C
Maximum rms on-state current25 A
Off-state repetitive peak voltage800 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Trigger device typeTRIAC
Base Number Matches1
Philips Semiconductors
Product specification
Triacs
BTA140 series
GENERAL DESCRIPTION
Glass passivated triacs in a plastic
envelope, intended for use in
applications
requiring
high
bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
Typical
applications include motor control,
industrial and domestic lighting,
heating and static switching.
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
BTA140-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500
500
25
190
600
600
25
190
800
800
25
190
V
A
A
PINNING - TO220AB
PIN
1
2
3
tab
DESCRIPTION
main terminal 1
PIN CONFIGURATION
tab
SYMBOL
T2
main terminal 2
gate
main terminal 2
1 23
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
mb
91 ˚C
full sine wave; T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 30 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
500
1
MAX.
-600
600
1
25
190
209
180
50
50
50
10
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.200
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