BCW61 Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (PNP)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
Top View
Mounting Pad Layout
.056 (1.43
)
.052 (1.33
)
Pin Configuration
1.
Base
2.
Emitter
3.
Collector
0.031 (0.8)
1
2
0.035 (0.9)
0.079 (2.0)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
max. .004 (0.1)
.045 (1.15)
.037 (0.95)
0.037 (0.95)
0.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Marking
BCW61A = BA
Code:
BCW61B = BB
BCW61C = BC
BCW61D = BD
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Ratings at 25°C ambient temperature unless otherwise specified.
Features
• PNP Silicon Epitaxial Planar Transistors
• Suited for low level, low noise, low
frequency applications in hybrid cicuits.
• Low Current, Low Voltage.
• As complementary types, BCW60 Series NPN
transistors are recommended.
Maximum Ratings & Thermal Characteristics
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current
Base Current (DC)
Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient Air
Note:
(1) Mounted on FR-4 printed-ciruit board.
Symbol
–V
CES
–V
CEO
–V
EBO
–I
C
–I
CM
–I
B
P
tot
T
j
T
STG
R
θJA
Value
32
32
5.0
100
200
50
250
150
–65 to +150
500
(1)
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C/W
Document Number 88171
09-May-02
www.vishay.com
1
BCW61 Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
DC Current Gain
at –V
CE
= 5 V, –I
C
=
at –V
CE
= 5 V, –I
C
=
at –V
CE
= 5 V, –I
C
=
at –V
CE
= 5 V, –I
C
=
at
at
at
at
at
at
at
at
–V
CE
=
–V
CE
=
–V
CE
=
–V
CE
=
–V
CE
=
–V
CE
=
–V
CE
=
–V
CE
=
5 V,
5 V,
5 V,
5 V,
1 V,
1 V,
1 V,
1 V,
–I
C
=
–I
C
=
–I
C
=
–I
C
=
–I
C
=
–I
C
=
–I
C
=
–I
C
=
10
10
10
10
2
2
2
2
µA
µA
µA
µA
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
BCW61A
BCW61B
BCW61C
BCW61D
BCW61A
BCW61B
BCW61C
BCW61D
BCW61A
BCW61B
BCW61C
BCW61D
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
–V
CEsat
–V
CEsat
–V
BEsat
–V
BEsat
–V
BE
–V
BE
–V
BE
–I
CES
Min.
–
30
40
100
120
180
250
380
60
80
100
110
60
120
600
680
600
–
–
–
–
–
100
–
–
–
–
–
–
–
–
–
TYP.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
650
550
720
–
–
–
–
4.5
11
2
200
260
330
520
85
480
Max.
–
–
–
–
220
310
460
630
–
–
–
–
250
550
850
1050
750
–
–
20
20
20
–
–
–
6
Unit
–
–
–
–
–
–
–
–
–
–
–
–
mV
mV
mV
mV
mV
mV
mV
nA
µA
nA
MHz
pF
pF
dB
mA
mA
mA
mA
mA
mA
mA
mA
50
50
50
50
Collector-Emitter Saturation Voltage
at –I
C
= 10 mA, –I
B
= 0.25 mA
at –I
C
= 50 mA, –I
B
= 1.25 mA
Base-Emitter Saturation Voltage
at –I
C
= 10 mA, –I
B
= 0.25 mA
at –I
C
= 50 mA, –I
B
= 1.25 mA
Base-Emitter Voltage
at –V
CE
= 5 V, –I
C
= 2 mA
at –V
CE
= 5 V, –I
C
= 10
µA
at –V
CE
= 1 V, –I
C
= 50 mA
Collector-Emiter Cut-off Current
at –V
CE
= 32 V, V
EB
=0
at –V
CE
= 32 V, V
EB
=0, T
A
= 150°C
Emitter-Base Cut-off Current
at –V
EB
= 4 V, I
C
=0
Gain-Bandwidth Product
at –V
CE
= 5 V, –I
C
= 10 mA, f = 100 MHz
Collector-Base Capacitance
at –V
CB
= 10 V, f = 1 MH
Z,
I
E
=0
Emitter-Base Capacitance
at –V
EB
= 0.5 V, f = 1 MH
Z,
I
C
=0
Noise Figure
at –V
CE
= 5 V, –I
C
= 200
µA,
R
S
= 2 kΩ, f = 100 kH
Z
, B = 200Hz
Small Signal Current Gain
at –V
CE
= 5V, –I
C
= 2 mA, f = 1.0 kH
Z
BCW60A
BCW60B
BCW60C
BCW60D
–I
EBO
f
T
C
CBO
C
EBO
F
h
fe
Turn-on Time at R
L
= 990Ω (see fig. 1)
– V
CC
= 10V, –Ic = 10mA, –I
B(on)
= I
B(off)
= 1mA
Turn-off Time at R
L
= 990Ω (see fig. 1)
– V
CC
= 10V, –Ic = 10mA, –I
B(on)
= I
B(off)
= 1mA
t
on
t
off
150
800
ns
ns
www.vishay.com
2
Document Number 88171
09-May-02
FPGA/CPLD
京公网安备 11010802033920号
EEWORLD
