BC383L datasheet, PDF - EEWORLD Datasheet

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BC383L: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,; CategoryDiscrete semiconductor The transistor; File Size70KB，1 Pages; ManufacturerMicro Electronics; Websitehttp://www.microelectr.com.hk

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BC383L Overview

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

BC383L Parametric

Parameter Name	Attribute value
Reach Compliance Code	unknown
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Base Number Matches	1

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BC383L Related Products

	BC383L	BC333	BC385	BC386	BC447	BC349	BC330	BC335
Description	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
Reach Compliance Code	unknown	unknow	unknown	unknown	unknown	unknown	unknown	unknown
Maximum collector current (IC)	0.1 A	0.05 A	0.1 A	0.1 A	-	0.1 A	0.03 A	0.05 A
Collector-emitter maximum voltage	30 V	25 V	45 V	20 V	-	20 V	45 V	25 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	100	100	100	-	40	220	100
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	-	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	-	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3
Number of components	1	1	1	1	-	1	1	1
Number of terminals	3	3	3	3	-	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	-	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	-	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.3 W	0.31 W	0.3 W	0.3 W	-	0.3 W	0.25 W	0.31 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	-	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	-	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	-	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	-	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	50 MHz	150 MHz	150 MHz	-	125 MHz	100 MHz	50 MHz
Maker	-	Micro Electronics	-	-	Micro Electronics	Micro Electronics	Micro Electronics	Micro Electronics

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