DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D117
BY8000 series
Fast high-voltage soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of June 1994
File under Discrete Semiconductors, SC01
1996 May 24
Philips Semiconductors
Product specification
Fast high-voltage soft-recovery
controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Soft-recovery switching
characteristics
•
Compact construction.
k
handbook, halfpage
BY8000 series
expansion of all used parts are
matched.
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
a
APPLICATIONS
•
For colour television and monitors
up to 25 kHz
•
High-voltage applications for:
– Multipliers
– Layer-wound diode-split-
transformers where controlled
avalanche is required.
MARKING
Cathode band colour codes
TYPE NUMBER
BY8004
BY8006
BY8008
BY8010
BY8012
BY8014
BY8016
PACKAGE CODE
SOD61AC
SOD61AD
SOD61AE
SOD61AF
SOD61AH
SOD61AI
SOD61AJ
violet
violet
violet
violet
violet
violet
violet
INNER BAND
black
green
red
violet
orange
lilac
grey
OUTER BAND
Fig.1 Simplified outline (SOD61) and symbol.
MAM163
1996 May 24
2
Philips Semiconductors
Product specification
Fast high-voltage soft-recovery
controlled avalanche rectifiers
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
BY8004
BY8006
BY8008
BY8010
BY8012
BY8014
BY8016
V
RW
working reverse voltage
BY8004
BY8006
BY8008
BY8010
BY8012
BY8014
BY8016
I
F(AV)
average forward current
BY8004
BY8006
BY8008
BY8010
BY8012
BY8014
BY8016
I
FRM
P
RSM
repetitive peak forward current
note 1
non-repetitive peak reverse power dissipation t = 20
µs
half sinewave;
T
j
= T
j max
prior to surge
BY8004
BY8006
BY8008
BY8010
BY8012
BY8014
BY8016
T
stg
T
j
Note
1. Withstands peak currents during flash-over in a picture tube.
storage temperature
junction temperature
averaged over any
20 ms period;
see Figs 2 to 8
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
PARAMETER
repetitive peak reverse voltage
−
−
−
−
−
−
−
CONDITIONS
BY8000 series
MIN.
MAX.
5
8
10
12
14
17
19
4
6
8
10
12
14
16
20
10
5
5
5
5
3
500
2.5
3.5
4.2
5.2
7.0
7.8
9.1
+120
+120
UNIT
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
mA
mA
mA
mA
mA
mA
mA
mA
kW
kW
kW
kW
kW
kW
kW
°C
°C
−65
−65
1996 May 24
3
Philips Semiconductors
Product specification
Fast high-voltage soft-recovery
controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
BY8004
BY8006
BY8008
BY8010
BY8012
BY8014
BY8016
I
R
Q
r
reverse current
recovery charge
V
R
= V
RWmax
; T
j
= 120
°C
when switched from I
F
= 100 mA to
V
R
≥
100 V and dI
F
/dt =
−200
mA/µs;
see Fig.16
when switched from I
F
= 100 mA to
V
R
≥
100 V and dI
F
/dt =
−200
mA/µs;
see Fig.16
when switched from I
F
= 2 mA to
I
R
= 4 mA; measured at I
R
= 1 mA;
see Fig.17
V
R
= 0 V; f = 1 MHz
−
−
−
−
−
−
−
CONDITIONS
I
F
= 100 mA; T
j
= T
j max
;
see Figs 9 to 15
MIN.
−
−
−
−
−
−
−
−
−
BY8000 series
TYP.
−
−
−
−
−
−
−
−
−
MAX.
20
25
30
38
50
55
63
3
1
V
V
V
V
V
V
V
UNIT
µA
nC
t
f
fall time
80
−
−
ns
t
rr
reverse recovery time
−
−
100
ns
C
d
diode capacitance
BY8004
BY8006
BY8008
BY8010
BY8012
BY8014
BY8016
0.90
0.65
0.55
0.45
0.35
0.30
0.25
−
−
−
−
−
−
−
pF
pF
pF
pF
pF
pF
pF
1996 May 24
4
Philips Semiconductors
Product specification
Fast high-voltage soft-recovery
controlled avalanche rectifiers
GRAPHICAL DATA
MBD301
BY8000 series
handbook, halfpage
20
handbook, halfpage
10
MBD303
I F(AV)
(mA)
16
a = 1.57
I F(AV)
(mA)
8
a = 1.57
12
6
8
a = 6.32
4
a = 6.32
4
2
0
0
100
T amb ( C)
o
0
200
0
100
T amb (
o
C)
200
BY8004.
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RWmax
; R
th j-a
≤
120 K/W.
a = 1.57: half sinewave.
a = 6.32: line output transformer application; see Fig.18.
BY8006.
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RWmax
; R
th j-a
≤
120 K/W.
a = 1.57: half sinewave.
a = 6.32: line output transformer application; see Fig.18.
Fig.2
Maximum permissible average forward
current as a function of ambient temperature.
Fig.3
Maximum permissible average forward
current as a function of ambient temperature.
handbook, halfpage
5
MBD305
handbook, halfpage
5
MBD307
I F(AV)
(mA)
4
a = 6.32
a = 1.57
I F(AV)
(mA)
4
a = 6.32
a = 1.57
3
3
2
2
1
1
0
0
100
T amb ( C)
o
0
200
0
100
T amb (
o
C)
200
BY8008.
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RWmax
; R
th j-a
≤
120 K/W.
a = 1.57: half sinewave.
a = 6.32: line output transformer application; see Fig.18.
BY8010.
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RWmax
; R
th j-a
≤
120 K/W.
a = 1.57: half sinewave.
a = 6.32: line output transformer application; see Fig.18.
Fig.4
Maximum permissible average forward
current as a function of ambient temperature.
Fig.5
Maximum permissible average forward
current as a function of ambient temperature.
1996 May 24
5
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