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BD189

Description
Trans GP BJT PNP 80V 1A 3-Pin TO-225 Bulk
CategoryDiscrete semiconductor    The transistor   
File Size55KB,1 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric Compare View All

BD189 Overview

Trans GP BJT PNP 80V 1A 3-Pin TO-225 Bulk

BD189 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Base Number Matches1
\Pio
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BD185
BD187
BD189
PLASTIC MEDIUM POWER
SILICON NPN TRANSISTOR
. . . designed for use in 5 to 10 Watt audio amplifiers utilizing
complementary or quasi complementary circuits.
DC Current Gain— h
pE
- 40 (Min) ® lg-0.6 Adc
BO 185, 187. 188 are complementary with BD 186. 188. 190
30, 45, 60 VOLTS
40 WATTS
4 AMPERE
POWER TRANSISTOR
NPN SILICON
MAXIMUM RAN OS
Hating
Collector-Emitter Vollage
Symbol
V
CEO
Tyue
BD IBS
BD187
BD189
Value
30
46
60
40
55
70
5
4.0
2.0
40
320
Unit
Vdc
Collector-Ban Vollage'
Emitter-Base Voltage
Collector Current
Bate Current
Total Device Dissipation T
r
»25*C
Derate above 2S°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
V
CBO
BD185
BD1S7
BD189
Vdc
Vdc
Adc
Adc
V
EBO
'c
'B
/o
T
J.
T
S,
B
Watte
mW/«C
»C
—SB to tltJO
"•*•
Symbol
Max
3.12
1
Unit
*JC
« c/w
Tpr
m-4
^
M
I
I"
f^H
K
ELECTRICAL CHARACTERISTICS (T,
•IK.*..
Characteristic
Collector-Emitter Sustaining Voltage*
d
c
-0.1 Adc, I
B
-0>
Collector Cutoff Current
(V
r
.MOVdc. L-0)
(vJf-BRVde, I'-O)
Symbol
8V
°
E0
'
Type
Min
Mix
Unit
s-
-*£-_&
K-^H—t C
L
„„„
J
Vdc
B.O IBS
8O 187
BD199
BD186
BD187
BD13S
30
4S -
60
Ml- WffTO
'CBO
mAdc
0-1
0.1
0.1
ffOTU
1 Ur.UANnileUUL
W TO DM A 4 1
a
WOII1UM MATUW.
CQKOIW
'E°
O)
Emitter Cutoff Current
(V
BE
-6.0Vdc, l
c
=0)
DC current Gefn
d
c
=0.5A. V
C E
-2V)
Callectoi-Eminei Saturation Vollage'
(l
c
- JAdc, I
B
- 0.2 Adc)
Bue-Emltter On Voltage*
(l
c
-2Adc.V
ct
-2.0Vdc)
Current-Gain-Bandwidth Product
(1
c
-1.0Adc, V
CE
= 10Vdc, f-1.0MHl)
• Pulse Tin: Futtt Width
£
300 Hi. Duly Cycle
£
10%.
(V
C1L
70
Vdc
'
'EBO
"FE
V
CE(sat)'
mAdc
1.O
-B
l
*«-
J
J
Of
..
i
9L
40
15
Vdc
- 1.0
_ m _UL
tin i
Ul>
lit
lit
..
1JI
»«
_SM__i
V
BE(on)'
Vdc
.jitdp.
i
in in
i
-_!3- _UL
m le]
JH JO
__UL no
BIU
&
TS"
ft
1.S
2.0
•T
MHz
«^
CASE 77-06
TO-1M
NJ Seini-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information ftirnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N J
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

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BD189 BD188 BD185
Description Trans GP BJT PNP 80V 1A 3-Pin TO-225 Bulk Trans GP BJT PNP 80V 1A 3-Pin TO-225 Bulk Trans GP BJT PNP 80V 1A 3-Pin TO-225 Bulk
Reach Compliance Code unknown unknown unknown
Base Number Matches 1 1 1
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