INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU932RPFI
DESCRIPTION
·High
Voltage
·DARLINGTON
APPLICATIONS
·High
ruggedness electronic ignitions
·High
voltage ignition coil driver
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current-peak
Base Current
w
.cn
i
em
cs
.is
w
w
VALUE
500
UNIT
V
450
5
V
V
15
A
30
1
A
A
5
60
150
-40~150
A
W
℃
℃
I
BM
P
C
T
j
T
stg
Base Current-peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
2.08
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BU932RPFI
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 0.1A; I
B
= 0; L= 10mH
450
V
V
CE
(sat)
V
BE
(sat)
I
CES
I
CEO
Collector-Emitter Saturation Voltage
I
C
= 8 A; I
B
= 150mA
1.8
V
Base-Emitter Saturation Voltage
I
C
= 8 A; I
B
= 150mA
V
CE
= 500V;V
BE
= 0
V
CE
= 500V;V
BE
= 0;T
j
= 125℃
V
CE
= 450V;I
B
= 0
2.2
1.0
5.0
1.0
V
Collector Cutoff Current
mA
Collector Cutoff Current
mA
I
EBO
Emitter Cutoff Current
h
FE
DC Current Gain
V
ECF
C-E Diode Forward Voltage
w
.cn
i
em
cs
.is
w
w
V
EB
= 5V; I
C
= 0
I
C
= 5A; V
CE
= 10V
300
I
F
= 10A
50
mA
2.8
V
isc Website：www.iscsemi.cn
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