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BTA212X-800C

Description
TRIAC, 800V V(DRM), 12A I(T)RMS,
CategoryAnalog mixed-signal IC    Trigger device   
File Size19KB,4 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BTA212X-800C Overview

TRIAC, 800V V(DRM), 12A I(T)RMS,

BTA212X-800C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current35 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current15 mA
JESD-609 codee0
Maximum leakage current0.5 mA
Maximum on-state voltage1.6 V
Maximum operating temperature125 °C
Maximum rms on-state current12 A
Off-state repetitive peak voltage800 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Trigger device typeTRIAC
Base Number Matches1
Philips Semiconductors
Preliminary specification
Three quadrant triacs
high commutation
GENERAL DESCRIPTION
Glass passivated high commutation
triacs in a full pack, plastic envelope
intended for use in circuits where high
static and dynamic dV/dt and high
dI/dt can occur. These devices will
commutate the full rated rms current
at the maximum rated junction
temperature, without the aid of a
snubber.
BTA212X series C
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
BTA212X-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500C
500
12
95
600C
600
12
95
800C
800
12
95
V
A
A
PINNING - SOT186A
PIN
1
2
3
DESCRIPTION
main terminal 1
PIN CONFIGURATION
case
SYMBOL
T2
main terminal 2
gate
1 2 3
T1
case isolated
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
hs
56 ˚C
full sine wave;
T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
CONDITIONS
MIN.
-
-
-500
500
1
MAX.
-600
600
1
12
-800
800
UNIT
V
A
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
-
95
105
45
100
2
5
5
0.5
150
125
A
A
A
2
s
A/µs
A
V
W
W
˚C
˚C
over any 20 ms
period
-
-
-
-
-40
-
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1997
1
Rev 1.000

BTA212X-800C Related Products

BTA212X-800C BTA212X-500C BTA212X-600C
Description TRIAC, 800V V(DRM), 12A I(T)RMS, TRIAC, 500V V(DRM), 12A I(T)RMS, TRIAC, 600V V(DRM), 12A I(T)RMS,
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code unknown unknown unknown
Critical rise rate of minimum off-state voltage 1000 V/us 1000 V/us 1000 V/us
Maximum DC gate trigger current 35 mA 35 mA 35 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V 1.5 V
Maximum holding current 15 mA 15 mA 15 mA
JESD-609 code e0 e0 e0
Maximum leakage current 0.5 mA 0.5 mA 0.5 mA
Maximum on-state voltage 1.6 V 1.6 V 1.6 V
Maximum operating temperature 125 °C 125 °C 125 °C
Maximum rms on-state current 12 A 12 A 12 A
Off-state repetitive peak voltage 800 V 500 V 600 V
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Trigger device type TRIAC TRIAC TRIAC
Base Number Matches 1 1 1
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