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BUV39

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size204KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

BUV39 Overview

Transistor

BUV39 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUV39
DESCRIPTION
·Low
Collector Saturation Voltage-
: V
CE(
sat
)
= 0.8V (Max.) @I
C
= 7.5A
·High
Switching Speed
APPLICATIONS
·Designed
for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage
V
BE
=-1.5V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current- Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
w
.cn
i
em
cs
.is
w
w
VALUE
160
90
7
UNIT
V
V
V
25
A
45
6
9
120
200
-65~200
A
A
A
W
I
BM
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.46
UNIT
℃/W
isc Website:www.iscsemi.cn
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