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BAS15

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size55KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance  
Download Datasheet Parametric View All

BAS15 Overview

Rectifier Diode,

BAS15 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Reach Compliance Codecompliant
ECCN codeEAR99
Diode typeRECTIFIER DIODE
Base Number Matches1
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
BAS15
FEATURES :
• High switching speed: max. 4 ns
• Continuous reverse voltage:max. 50 V
• Repetitive peak reverse voltage:max. 50 V
• Repetitive peak forward current:max. 225 mA.
• Pb / RoHS Free
HIGH SPEED SWITCHING DIODE
DO - 34 Glass
0.078 (2.0 )max.
1.00 (25.4)
min.
Cathode
Mark
0.118 (3.0)
max.
0.017 (0.43)max.
MECHANICAL DATA :
Case:
DO-34 Glass Case
Weight:
approx. 0.11g
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics
(Rating at 25
°
C ambient temperature unless otherwise specified
.)
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Continuous Forward Current , Ta = 150
°C
Maximum Repetitive Peak Forward Current
Maximum Power Dissipation
Maximum Non-repetitive Peak Forward Current at t < 1s, Tj = 25
°C
Maximum Junction Temperature
Storage Temperature Range
Symbol
V
RRM
V
RM
I
F
I
FRM
P
D
I
FSM
T
J
T
S
Value
50
50
100
225
350
0.5
200
-65 to + 200
Unit
V
V
mA
mA
mW
A
°C
°C
Electrical Characteristics
Parameter
Reverse Current
Forward Voltage
Diode Capacitance
Reverse Recovery Time
(Tj = 25°C unless otherwise noted)
Symbol
I
R
V
F
Cd
Trr
Test Condition
V
R
= 50 V
V
R
= 50 V , Tj = 150
°C
I
F
= 100 mA
f = 1MHz ; V
R
= 0
I
F
= 10 mA to I
R
= 60mA
R
L
= 100
Ω
; Measured
at I
R
= 1 mA
Min.
-
-
-
-
-
Typ.
-
-
-
-
-
Max.
200
100
1.1
2.0
4
Unit
nA
μA
V
pF
ns
Page 1 of 2
Rev. 03 : December 3, 2008

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