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2SK3458

Description
Power Field-Effect Transistor, 6A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size84KB,8 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

2SK3458 Overview

Power Field-Effect Transistor, 6A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN

2SK3458 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)66.5 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage800 V
Maximum drain current (ID)6 A
Maximum drain-source on-resistance2.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)24 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3458
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3458 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply.
ORDERING INFORMATION
PART NUMBER
2SK3458
2SK3458-S
2SK3458-ZK
PACKAGE
TO-220AB
TO-262
TO-263
FEATURES
Low gate charge
Q
G
= 25 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 6.0 A)
Gate voltage rating
±30
V
Low on-state resistance
R
DS(on)
= 2.2
MAX. (V
GS
= 10 V, I
D
= 3.0 A)
Avalanche capability ratings
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
800
±30
±6.0
±24
1.5
100
150
–55 to +150
6.0
66.5
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 150 V, R
G
= 25
Ω,
V
GS
= 20
¡
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14755EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
©
2000
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