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BRA114EMPUL

Description
PRE-BIASED "DIGITAL" TRANSISTOR,100MA I(C),SOT-23
CategoryDiscrete semiconductor    The transistor   
File Size107KB,12 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

BRA114EMPUL Overview

PRE-BIASED "DIGITAL" TRANSISTOR,100MA I(C),SOT-23

BRA114EMPUL Parametric

Parameter NameAttribute value
Reach Compliance Codecompliant
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)30
Number of components1
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
surface mountYES
Transistor component materialsSILICON
Base Number Matches1
BRA144EMP Series
PNP Built-in Resistor Transistor MPAK Series
Inverter, Driver, Switching
ADE-208-1442B (Z)
Rev.2
Sep. 2001
Features
Built–in Resistor Type
Simplifies Circuit Design
Reduces Board Space
Complementary pair with BRC144EMP series
Outline
MPAK
3
R
1
2
3
1
2
1. Ground (Emitter)
2. Input (Base)
3. Output (Collector)
1
R
2
Note: Marking is shown in below.
Device
BRA144EMP
BRA124EMP
BRA114EMP
BRA143EMP
BRA123EMP
Marking
AG
CG
EG
GG
JG
R1 (kΩ)
47
22
10
4.7
2.2
R2 (kΩ)
47
22
10
4.7
2.2

BRA114EMPUL Related Products

BRA114EMPUL BRA144EMPTL BRA124EMPTL BRA124EMPUL
Description PRE-BIASED "DIGITAL" TRANSISTOR,100MA I(C),SOT-23 PRE-BIASED "DIGITAL" TRANSISTOR,100MA I(C),SOT-23 PRE-BIASED \"DIGITAL\" TRANSISTOR,100MA I(C),SOT-23 PRE-BIASED \"DIGITAL\" TRANSISTOR,100MA I(C),SOT-23
Reach Compliance Code compliant compliant compliant compliant
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Minimum DC current gain (hFE) 30 70 56 56
Number of components 1 1 1 1
Polarity/channel type PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W 0.2 W
surface mount YES YES YES YES
Transistor component materials SILICON SILICON SILICON SILICON
Maker - Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation

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