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BS112

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size133KB,2 Pages
ManufacturerITT Corporation
Download Datasheet Parametric Compare View All

BS112 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BS112 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)0.2 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.83 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

BS112 Related Products

BS112 BS208 BS212 BS250 BS108
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Transistor Transistor Transistor Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code unknown unknown unknown unknown unknow
Configuration Single Single Single Single Single
Maximum drain current (Abs) (ID) 0.2 A 0.2 A 0.2 A 0.25 A 0.25 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e0 e0 e0 e0
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.83 W 0.83 W 0.83 W 0.83 W 0.35 W
surface mount NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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