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BSM181AR

Description
Power Field-Effect Transistor, 36A I(D), 800V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size224KB,7 Pages
ManufacturerEUPEC [eupec GmbH]
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BSM181AR Overview

Power Field-Effect Transistor, 36A I(D), 800V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

BSM181AR Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Other featuresAVALANCHE RATED
Shell connectionISOLATED
ConfigurationSINGLE
Minimum drain-source breakdown voltage800 V
Maximum drain current (ID)36 A
Maximum drain-source on-resistance0.02 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUFM-X4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)144 A
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BSM 181 A / BSM 181 AR
SIMOPAC
®
MODULE
• Single switch power MOSFET module
• N channel, enhancement mode
• Avalanche rated
• Package with insulated metal base plate
• Built in gate series resistor
Type
BSM 181 AR
V
DS
800 V
I
D
36 A
R
DS(on)
max
0.24
Package
SSW MOS 1
Ordering Code
C67076-A1017-A20
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
R
GS
= 20 kΩ
Gate source voltage
Continuous drain current
T
C
= 25 °C
DC drain current, pulsed
T
C
= 25 °C
Power dissipation
T
C
= 25 °C
Chip temperature
Storage temperature
T
jmax
T
stg
P
tot
700
150
-40 ... + 125
°C
I
Dpuls
144
W
V
GS
I
D
36
Symbol
V
DS
V
DGR
800
± 20
A
Values
800
Unit
V
Thermal resistance chip - case
Thermal resistance case - heat sink
Insulation test voltage,
t
= 1min
Creepage distance, drain-source
Clearance, drain-source
DIN humidity category, DIN 40 040
DIN humidity category, DIN IEC 68-1
R
thJC
R
thCA
V
is
0.18
0.05
2.5
16
11
F
40 / 125 / 56
K/W
kV ac
mm
1
Nov-03-1997

BSM181AR Related Products

BSM181AR C67076-A1017-A20
Description Power Field-Effect Transistor, 36A I(D), 800V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 36A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Reach Compliance Code unknown unknown
Other features AVALANCHE RATED AVALANCHE RATED
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 800 V 800 V
Maximum drain current (ID) 36 A 36 A
Maximum drain-source on-resistance 0.02 Ω 0.24 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-XUFM-X4 R-XUFM-X4
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 144 A 144 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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