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BSM30GP60-A

Description
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel,
CategoryDiscrete semiconductor    The transistor   
File Size49KB,1 Pages
ManufacturerEUPEC [eupec GmbH]
Download Datasheet Parametric Compare View All

BSM30GP60-A Overview

Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel,

BSM30GP60-A Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Maximum collector current (IC)30 A
Collector-emitter maximum voltage600 V
ConfigurationCOMPLEX
JESD-30 codeR-XUFM-X24
Number of components7
Number of terminals24
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Base Number Matches1

BSM30GP60-A Related Products

BSM30GP60-A BSM35GP120-A 0436500614_18 BSM75GP60-A BSM10GP60-A BSM20GP60-A BSM50GP120-A BSM15GP60-A BSM15GP120-A BSM10GP120-A
Description Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, Micro-Fit 3.0 Right Angle Header, 3.00mm Pitch, Single Row, 6 Circuits Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES, N-Channel,
Reach Compliance Code unknown unknown - unknown unknown unknown unknown unknown unknown unknown
Maximum collector current (IC) 30 A 35 A - 75 A 10 A 20 A 50 A 15 A 15 A 10 A
Collector-emitter maximum voltage 600 V 1200 V - 600 V 600 V 600 V 1200 V 600 V 1200 V 1200 V
Configuration COMPLEX COMPLEX - COMPLEX COMPLEX COMPLEX COMPLEX COMPLEX COMPLEX COMPLEX
JESD-30 code R-XUFM-X24 R-XUFM-X24 - R-XUFM-X24 R-XUFM-X24 R-XUFM-X24 R-XUFM-X24 R-XUFM-X24 R-XUFM-X24 R-XUFM-X24
Number of components 7 7 - 7 7 7 7 7 7 7
Number of terminals 24 24 - 24 24 24 24 24 24 24
Package body material UNSPECIFIED UNSPECIFIED - UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO - NO NO NO NO NO NO NO
Terminal form UNSPECIFIED UNSPECIFIED - UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER - UPPER UPPER UPPER UPPER UPPER UPPER UPPER
Transistor component materials SILICON SILICON - SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Maker - EUPEC [eupec GmbH] - EUPEC [eupec GmbH] EUPEC [eupec GmbH] EUPEC [eupec GmbH] EUPEC [eupec GmbH] EUPEC [eupec GmbH] EUPEC [eupec GmbH] EUPEC [eupec GmbH]
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