BFP 194
PNP Silicon RF Transistor
For low distortion broadband amplifier in
antenna and telecommunications systems up
to 1.5 GHz at collector currents from 20 mA
to 80 mA
3
4
2
1
VPS05178
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
R
thJS
1)
T
S
is measured on the collector lead at the soldering point to the pcb
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
BFP 194
Maximum Ratings
Parameter
Marking
RKs
1=C
Pin Configuration
2=E
3=B
4=E
Package
SOT-143
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
77 °C
1)
P
tot
T
j
T
A
T
stg
Value
15
20
20
3
100
10
700
150
-65 ... 150
-65 ... 150
Unit
V
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
T
S
mA
mW
°C
105
K/W
1
Oct-12-1999
BFP 194
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 2 V,
I
C
= 0
DC current gain
I
C
= 70 mA,
V
CE
= 8 V
h
FE
15
50
-
I
EBO
-
-
1
I
CBO
-
-
100
V
(BR)CEO
15
-
-
typ.
max.
Unit
V
nA
µA
-
2
Oct-12-1999
BFP 194
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
AC characteristics
(verified by random sampling)
Transition frequency
I
C
= 70 mA,
V
CE
= 8 V,
f
= 500 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Collector-emitter capacitance
V
CE
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Noise figure
I
C
= 20 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 900 MHz
f
= 1.8 GHz
Power gain, maximum available
F)
I
C
= 70 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 900 MHz
f
= 1.8 GHz
Transducer gain
|S
21e
|
2
,
-
-
9
3
-
-
I
C
= 70 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
f
= 900 MHz
f
= 1.8 GHz
G
ma
-
-
12
7
-
-
F
-
-
2.8
4.7
-
-
C
eb
-
4.4
-
C
ce
-
0.3
-
C
cb
-
1.4
2
f
T
3.5
5
-
typ.
max.
Unit
GHz
pF
dB
3
Oct-12-1999
BFP 194
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
4.574
9.1007
0.841
1.7871
1.6
4.1356
17.699
53.11
0.010453
0.71631
0.97481
0
3
fA
V
-
V
-
fF
ps
mA
V
ns
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
111.78
0.84785
92.296
0.012843
0.75304
0.15908
0.84843
0.65766
0
0.40003
0
0
0.90755
-
A
-
A
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
0.66503
21.629
0.43618
0.061674
0.10833
0.48212
0.10323
3585.6
0.063742
0.75
1.11
300
-
fA
-
mA
-
0.0078447 fA
V
-
deg
-
fF
-
-
V
fF
-
V
eV
K
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitentechnik (IMST)
1996 SIEMENS AG
Package Equivalent Circuit:
L
BI
=
L
BO
=
L
EI
=
L
EO
=
L
CI
=
L
CO
=
C
BE
=
C
CB
=
C
CE
=
0.84
0.65
0.31
0.14
0.07
0.42
145
19
281
nH
fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or salesoffice
to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm
4
Oct-12-1999
BFP 194
Total power dissipation
P
tot
=
f
(T
A
*,
T
S
)
* Package mounted on epoxy
800
mW
600
T
S
P
tot
500
400
T
A
300
200
100
0
0
20
40
60
80
100
120
°C
150
T
A
,T
S
Permissible Pulse Load
R
thJS
=
f
(t
p
)
Permissible Pulse Load
P
totmax
/P
totDC
=
f
(t
p
)
10
3
10
2
K/W
P
totmax
/ P
totDC
-
10
2
10
1
10
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10
0 -7
10
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
5
Oct-12-1999
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