INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 400V(Min)-BUX82
= 450V(Min)-BUX83
·High
Switching Speed
APPLICATIONS
·Designed
for use as high-speed power switch at high
voltage.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
BUX82
V
CES
Collector-Emitter Voltage
BUX83
BUX82
V
CEO
Collector-Emitter Voltage
BUX83
Collector-Emitter Voltage
R
BE
= 50Ω
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation @T
C
=25℃
Junction Temperature
Storage Temperature
BUX82
BUX83
450
500
V
500
10
6
8
2
3
75
150
-65~150
V
A
A
A
A
W
℃
℃
1000
400
V
VALUE
800
V
UNIT
BUX82/83
V
CER
V
EBO
I
C
I
CM
I
B
B
I
BM
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.65
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BUX82
I
C
= 100mA ; I
B
= 0; L= 25mH
BUX83
BUX82
I
C
= 100mA ; R
BE
= 100Ω; L= 15mH
BUX83
BUX82
I
C
= 4A; I
B
= 1.25A
B
BUX82/83
CONDITIONS
MIN
400
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
V
450
500
V
500
3.0
V
1.6
1.5
V
(BR)CER
Collector-Emitter
Breakdown Voltage
V
CE
(sat)
-1
Collector-Emitter
Saturation Voltage
BUX83
BUX82
I
C
= 2.5A; I
B
= 0.5A
BUX83
I
C
= 4A; I
B
= 1.25A
B
V
CE
(sat)
-2
Collector-Emitter
Saturation Voltage
V
1.4
1.6
1.4
1.0
2.0
1.0
2.0
10
30
500
6
pF
MHz
V
V
V
BE
(sat)-1
V
BE
(sat)-2
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
BUX82
BUX83
I
C
= 2.5A; I
B
= 0.5A
V
CES
=800V; V
BE(
off
)
= 1.5V
V
CES
=800V; V
BE(
off
)
= 1.5V,T
C
=125℃
V
CES
=1000V;V
BE(
off
)
=1.5V
V
CES
=1000V;V
BE(
off
)
=1.5V,T
C
=125℃
V
EB
= 10V; I
C
=0
I
C
= 1.2A ; V
CE
= 5V
I
E
= 0;V
CB
= 10V;f
test
= 1MHz
I
C
= 0.2A ; V
CE
= 10V ;f
test
= 1MHz
I
CES
Collector
Cutoff Current
mA
I
EBO
h
FE
C
OB
f
T
Emitter Cutoff Current
DC Current Gain
Output Capacitance
Current-Gain--Bandwidth Product
mA
Switching Times
t
on
t
stg
t
f
Turn-On Time
Storage Time
Fall Time
I
C
= 2.5A; I
B1
= 0.5A;I
B2
= -1A;
V
CC
= 250V
0.3
2.0
0.3
0.5
3.5
μs
μs
μs
isc Website：www.iscsemi.cn
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