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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
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© Nexperia B.V. (year). All rights reserved.
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BUK9E06-55B
N-channel TrenchMOS FET
Rev. 04 — 22 July 2009
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology. This product has been designed and qualified to the appropriate
AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
Quick reference
Conditions
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
Typ
-
-
-
Max
55
75
258
Unit
V
A
W
drain-source voltage T
j
≥
25 °C; T
j
≤
175 °C
drain current
total power
dissipation
Symbol Parameter
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
Q
GD
gate-drain charge
V
GS
= 5 V; I
D
= 25 A;
V
DS
= 44 V; T
j
= 25 °C;
see
Figure 14;
see
Figure 15
-
22
-
nC
I
D
= 75 A; V
sup
≤
55 V;
R
GS
= 50
Ω;
V
GS
= 5 V;
T
j(init)
= 25 °C; unclamped
-
-
679
mJ
NXP Semiconductors
BUK9E06-55B
N-channel TrenchMOS FET
Quick reference
Conditions
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C;
see
Figure 11;
see
Figure 12
V
GS
= 5 V; I
D
= 25 A;
T
j
= 25 °C;
see
Figure 11;
see
Figure 12
Min
-
Typ
4.8
Max
5.4
Unit
mΩ
Table 1.
Symbol Parameter
Static characteristics
R
DSon
drain-source
on-state resistance
-
5.1
6
mΩ
[1]
Continuous current is limited by package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
G
D
S
D
Description
gate
drain
source
mounting base; connected to
drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
1 2 3
SOT226
(I2PAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK9E06-55B
I2PAK
Description
plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB
Version
SOT226
Type number
BUK9E06-55B_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 22 July 2009
2 of 13
NXP Semiconductors
BUK9E06-55B
N-channel TrenchMOS FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 5 V; see
Figure 1;
see
Figure 3 [1]
T
mb
= 25 °C; V
GS
= 5 V; see
Figure 1;
see
Figure 3 [2]
T
mb
= 100 °C; V
GS
= 5 V; see
Figure 1
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
T
mb
= 25 °C;
T
mb
= 25 °C;
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
Avalanche ruggedness
non-repetitive
I
D
= 75 A; V
sup
≤
55 V; R
GS
= 50
Ω;
V
GS
= 5 V;
drain-source avalanche T
j(init)
= 25 °C; unclamped
energy
-
679
mJ
[1]
[2]
T
mb
= 25 °C; t
p
≤
10 µs; pulsed; see
Figure 3
T
mb
= 25 °C; see
Figure 2
[2]
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-15
-
-
-
-
-
-55
-55
-
-
-
Max
55
55
15
146
75
75
587
258
175
175
146
75
587
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
[1]
[2]
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
150
I
D
(A)
100
03nh85
120
P
der
(%)
80
03aa16
Capped at 75 A due to package
50
40
0
0
50
100
150
T
mb
(
°
C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
© NXP B.V. 2009. All rights reserved.
BUK9E06-55B_4
Product data sheet
Rev. 04 — 22 July 2009
3 of 13
NXP Semiconductors
BUK9E06-55B
N-channel TrenchMOS FET
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
03nh83
t
p
= 10
μ
s
100
μ
s
Capped at 75 A due to package
DC
1 ms
10 ms
100 ms
10
1
10
-1
1
10
V
DS
(V)
10
2
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9E06-55B_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 22 July 2009
4 of 13
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