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BD676, BD676A, BD678,
BD678A, BD680, BD680A,
BD682, BD682T
Plastic Medium-Power
Silicon PNP Darlingtons
This series of plastic, medium−power silicon PNP Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
Features
http://onsemi.com
•
High DC Current Gain
−
•
•
•
•
h
FE
= 750 (Min) @ I
C
= 1.5 and 2.0 Adc
Monolithic Construction
BD676, 676A, 678, 678A, 680, 680A, 682 are complementary
with BD675, 675A, 677, 677A, 679, 679A, 681
BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703
Pb−Free Package are Available*
4.0 AMP DARLINGTON
POWER TRANSISTORS
PNP SILICON
45, 60, 80, 100 VOLT, 40 WATT
COLLECTOR 2
BASE
3
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BD676, BD676A
BD678, BD678A
BD680, BD680A
BD682
Collector-Base Voltage
BD676, BD676A
BD678, BD678A
BD680, BD680A
BD682
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
Value
45
60
80
100
Vdc
45
60
80
100
5.0
4.0
0.1
40
0.32
−55
to +150
Vdc
Adc
Adc
W
W/°C
°C
YWW
BD6xxG
3 2
1
Unit
Vdc
EMITTER 1
V
CB
TO−225AA
CASE 77
STYLE 1
V
EB
I
C
I
B
P
D
MARKING DIAGRAMS
YWW
B
BD6xxG
T
J
, T
stg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Symbol
R
qJC
Max
3.13
Unit
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
BD6xx = Device Code
xx = 76, 76A, 78, 78A,
80, 80A, 82, or 82T
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2008
September, 2008
−
Rev. 13
Publication Order Number:
BD676/D
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T
PD, POWER DISSIPATION (WATTS)
40
35
30
25
20
15
10
5.0
0
15
30
45
60
75
90
105
120
135
150
165
IC, COLLECTOR CURRENT (AMP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
BV
CEO
Min
45
60
80
100
−
−
−
−
Max
−
−
−
−
Unit
Vdc
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= 50 mAdc, I
B
= 0)
BD676, 676A
BD678, 678A
BD680, 680A
BD682
Collector Cutoff Current (V
CE
= Half Rated V
CEO
, I
B
= 0)
Collector Cutoff Current
(V
CB
= Rated BV
CEO
, I
E
= 0)
(V
CB
= Rated BV
CEO
. I
E
= 0, T
C
= 100°C)
I
CEO
I
CBO
500
0.2
2.0
2.0
mAdc
mAdc
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I
C
= 0)
DC Current Gain (Note 1)
(I
C
= 1.5 Adc, V
CE
= 3.0 Vdc)
(I
C
= 2.0 Adc, V
CE
= 3.0 Vdc)
I
EBO
h
FE
mAdc
ON CHARACTERISTICS
BD676, 678, 680, 682
BD676A, 678A, 680A
BD678, 680, 682
BD676A, 678A, 680A
750
750
−
−
−
−
−
−
−
−
Collector−Emitter Saturation Voltage (Note 1)
(I
C
= 1.5 Adc, I
B
= 30 mAdc)
(I
C
= 2.0 Adc, I
B
= 40 mAdc)
Base−Emitter On Voltage (Note 1)
(I
C
= 1.5 Adc, V
CE
= 3.0 Vdc)
(I
C
= 2.0 Adc, V
CE
= 3.0 Vdc)
V
CE(sat)
V
BE(on)
2.5
2.8
2.5
2.5
Vdc
Vdc
BD678, 680, 682
BD676A, 678A, 680A
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (I
C
= 1.5 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz)
h
fe
1.0
−
−
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
50
45
2.0
1.0
0.5
0.2
0.1
T
C
= 25°C
BONDING WIRE LIMIT
THERMAL LIMIT at T
C
= 25°C
SECONDARY BREAKDOWN LIMIT
BD676, 676A
BD678, 678A
BD680, 680A
BD682
100
5.0
0.05
1.0
T
C
, CASE TEMPERATURE (°C)
2.0
5.0
10
50
20
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Power Temperature Derating
Figure 2. DC Safe Operating Area
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
http://onsemi.com
2
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T
PNP
BD676, 676A
BD678, 678A
BD680, 680A
BD682
BASE
COLLECTOR
[
8.0 k
[
120
EMITTER
Figure 3. Darlington Circuit Schematic
ORDERING INFORMATION
Device
BD676
BD676G
BD676A
BD676AG
BD678
BD678G
BD678A
BD678AG
BD680
BD680G
BD680A
BD680AG
BD682
BD682G
BD682T
BD682TG
Package
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
Shipping
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
50 Units / Rail
50 Units / Rail
http://onsemi.com
3
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T
PACKAGE DIMENSIONS
TO−225AA
CASE 77−09
ISSUE Z
−B−
U
Q
−A−
1 2 3
F
M
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077-01 THRU -08 OBSOLETE, NEW STANDARD
077-09.
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5
_
TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
---
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5
_
TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
---
H
K
V
G
S
D
2 PL
0.25 (0.010)
M
J
R
0.25 (0.010)
A
M
A
M
M
B
M
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
B
M
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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