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LBAS21SLT1G

Description
Rectifier Diode, 2 Element, 250V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size54KB,3 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
Download Datasheet Parametric View All

LBAS21SLT1G Overview

Rectifier Diode, 2 Element, 250V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3

LBAS21SLT1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDSO-G3
Maximum non-repetitive peak forward current0.625 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.225 W
Maximum repetitive peak reverse voltage250 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
High Voltage Switching Diode
LBAS21SLT1
FETURE
3
Pb-Free Package is available.
1
2
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
250
225
625
Unit
Vdc
mAdc
mAdc
SOT– 23 (TO–236AB)
ANODE
1
CATHODE
2
3
CATHODE/ANODE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
R
θJA
T
J
, T
stg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted)
Characteristic
Symbol
I
R
V
(BR)
V
F
C
D
t
rr
1000
1250
5.0
50
pF
ns
250
0.1
100
Vdc
mV
Min
Max
Unit
µAdc
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 200Vdc)
(V
R
= 200Vdc, T
J
= 150°C)
Reverse Breakdown Voltage
(I
BR
= 100
µAdc)
Forward Voltage
(I
F
= 100 mAdc)
(I
F
= 200 mAdc)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Reverse Recovery Time
(I
F
= I
R
= 30mAdc, R
L
= 100
Ω)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING AND ORDERING INFORMATION
Device
LBAS21SLT1
LBAS21SLT1G
Marking
JT
JT
(Pb-Free)
Shipping
3000/Tape&Reel
3000/Tape&Reel
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