New Product
BU2006 thru BU2010
Vishay General Semiconductor
High-Current Density Single-Phase Bridge Rectifiers
Case Style BU
FEATURES
• UL recognition file number E309391
(QQQX2) UL 1557 (see *)
• Thin single in-line package
+
~
~
-
-
~
~
+
• Superior thermal conductivity
• Solder dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances and white-goods applications.
MECHANICAL DATA
Case:
BU
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, meets JESD 201 class
1A whisker test
Polarity:
As marked on body
Mounting Torque:
10 cm-kg (8.8 inches-lbs) max.
Recommended Torque:
5.7 cm-kg (5 inches-lbs)
+
~
~
-
* Tested to UL standard for safety electrically isolated semiconductor
devices. UL 1557 4th edition.
Dielectric tested to maximum case, storage and junction
temperature to 150 °C to withstand 1500 V.
Epoxy meets UL 94V-0 flammability rating.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 10 A
T
J
max.
20 A
600 V, 800 V, 1000 V
240 A
5 µA
0.85 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Average rectified forward current (Fig. 1, 2)
Non-repetitive peak forward surge current
8.3 ms single sine-wave, T
J
= 25 °C
Rating for fusing (t < 8.3 ms) T
J
= 25 °C
Operating junction and storage temperature range
Notes:
(1) With 60 W air cooled heatsink
(2) Without heatsink, free air
T
C
= 61 °C
(1)
T
A
= 25 °C
(2)
SYMBOL
V
RRM
I
O
I
FSM
I
2
t
T
J
, T
STG
BU2006
600
BU2008
800
20
3.5
240
239
- 55 to + 150
BU2010
1000
UNIT
V
A
A
A
2
s
°C
Document Number: 84804
Revision: 24-Aug-07
www.vishay.com
1
New Product
BU2006 thru BU2010
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward
voltage per diode
(1)
Maximum reverse current per diode
Typical junction capacitance per diode
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
TEST CONDITIONS
at I
F
= 10 A
at rated V
R
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
SYMBOL
V
F
I
R
C
J
TYP.
0.95
0.85
-
110
95
MAX.
1.05
0.95
5.0
350
-
UNIT
V
µA
pF
at 4.0 V, 1 MHz
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
Notes:
(1) With 60 W air cooled heatsink
(2) Without heatsink, free air
SYMBOL
R
θJC
(1)
R
θJA
(2)
BU2006
BU2008
2.4
20
BU2010
UNIT
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
BU2006-E3/45
BU2006-E3/72
UNIT WEIGHT (g)
4.76
4.76
PREFERRED PACKAGE CODE
45
72
BASE QUANTITY
20
200
DELIVERY MODE
Tube
Paper box
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
24
5
20
Average Forward Rectified Current (A)
Average Forward Output Current (A)
4
16
12
With
Heatsink
Sine-Wave, R-Load
T
C
Measured at Device Bottom
T
C
T
C
3
2
Without
Heatsink
Sine-Wave, R-Load
Free Air, T
A
8
4
1
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
Case Temperature (°C)
Ambient Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
Figure 2. Forward Current Derating Curve
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Document Number: 84804
Revision: 24-Aug-07
New Product
BU2006 thru BU2010
Vishay General Semiconductor
50
1000
Instantaneous Reverse Current (µA)
T
J
= 150 °C
100
T
J
= 125 °C
10
Average Power Loss (W)
40
30
20
1
T
J
= 25 °C
10
0
0
4
8
12
16
20
24
0.1
10
20
30
40
50
60
70
80
90
100
Average Forward Current (A)
Percent of Rated Peak Reverse
Voltage
(%)
Figure 3. Average Rectified Forward Current
Figure 5. Typical Reverse Characteristics Per Diode
100
1000
T
J
= 150 °C
Instantaneous Forward Current (A)
10
T
J
= 125 °C
1
Junction Capacitance (pF)
1.0
1.1
100
0.1
T
J
= 25 °C
0.01
0.3
10
0.4
0.5
0.6
0.7
0.8
0.9
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 4. Typical Forward Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
Document Number: 84804
Revision: 24-Aug-07
www.vishay.com
3
New Product
BU2006 thru BU2010
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Case Type BU
0.880 (22.3)
0.860 (21.8)
0.020R (TYP.)
0.125 (3.2) x 45°
CHAMFER
0.160 (4.1)
0.140 (3.5)
0.310 (7.9)
0.290 (7.4)
9°
TYP
0.161 (4.10)
0.142 (3.60)
View
A
0.080 (2.03)
0.060 (1.52)
0.075
(1.9)R
0.740 (18.8)
0.720 (18.3)
+
~
~
-
0.085 (2.16)
0.065 (1.65)
5°
TYP
0.710 (18.0)
0.690 (17.5)
0.050 (1.27)
0.040 (1.02)
0.100 (2.54)
0.085 (2.16)
0.048 (1.23)
0.039 (1.00)
0.190 (4.83)
0.210 (5.33)
0.080 (2.03)
0.065 (1.65)
0.062 (1.57)
0.052 (1.32)
Polarity shown on front side of case, positive lead
beveled
corner
0.055 (1.385) Ref.
0.094 (2.39) x 45° Ref.
R0.11
(2.78) Ref.
0.64 (16.28) Ref.
0.62 (15.78) Ref.
R0.10
(2.60) Ref.
0.055 (1.385) Ref.
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4
Document Number: 84804
Revision: 24-Aug-07
New Product
BU2006 thru BU2010
Vishay General Semiconductor
APPLICATION NOTE
(1) Device UL approved for safety use dielectric strength of 1500 V.
(2) If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement.
(3) Heat sink shape recommendation:
(3)
Heat Sink
2.5 mm Min.
2.5 mm Min.
By Safety Requirements
Document Number: 84804
Revision: 24-Aug-07
www.vishay.com
5
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