, D
nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BUW58
Silicon NPN Transistors
IB
2E 3C
Features
With TO-3 package
,00 THICK BSA£
P
.
.
t
22.22,efMAX
Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Emitter to base voltage
Base Current
Collector current-Continuous
Total Power Dissipation@TC=29 j
Junction temperature
Storage temperature
20
120
200
5.0
J^
T"
to
o>
CO
*
'
0.966-1.1)92
RATING
250
160
UNIT
V
-
&
V
CB
VCEO
VCER
V
3.84-4.21
VEB
IB
Ic
PD
T,
Tstg
V
A
W
D
0
—16.89*
-29.90-30.40-
—40.13MAX
-65-200
TO-3
Electrical Characteristics Tc=25
SYMBOL
VCEO
VCER
ICEO
ICEX
ICBO
VEBO
VcE(saM)
VcE(sat-2)
VcE(sat-3)
VcE(sat-4)
hpE-1
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current
Collector-emitter breakdown voltage
Emitter Cutoff Current
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Base-emitter On voltages
Current Gain-Bandwidth Product
CONDITIONS
lc=100mA; I
B
=0
MIN
160
TYP
MAX
UNIT
V
V
C
E=160V; I
B
=0
0.5
mA
V
CB
=250V; I
E
=0
0.1
mA
V
l
E
=1mA; l
c
=0
lc=6.0A; I
B
=0.6A
5
0.6
V
lc=15A;V
C
E=1.5V
10
hpE-2
VBE(on)
fr
lc=0.5A;V
CE
=10V
15
MHz
Quality Semi-Conductors
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