BFC40 datasheet, PDF - EEWORLD Datasheet

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BFC40: Description2A, 1500V, 11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD, TO-247AD, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size12KB，1 Pages; ManufacturerSEMELAB

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BFC40 Overview

2A, 1500V, 11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD, TO-247AD, 3 PIN

BFC40 Parametric

Parameter Name	Attribute value
Parts packaging code	TO-247AD
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compliant
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	1500 V
Maximum drain current (ID)	2 A
Maximum drain-source on-resistance	11 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-247AD
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	4 A
Certification status	Not Qualified
Guideline	CECC
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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LAB

TO247–AD Package Outline.

Dimensions in mm (inches)

4.69

5.31

1.49

2.49

(0.185)

(0.209)

(0.059)

(0.098)

6.15

(0.242)

BSC

15.49 (0.610)

16.26 (0.640)

3.55 (0.140)

3.81 (0.150)

SEME

BFC40

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

ISOLATED

POWER MOSFETS

V

DSS

I

D(cont)

R

DS(on)

1500V

2A

8.00

W

4.50

(0.177)

M ax.

20.80 (0.819)

21.46 (0.845)

1

2

3

1.65 (0.065)

2.13 (0.084)

2.87 (0.113)

3.12 (0.123)

0.40 (0.016)

0.79 (0.031)

19.81 (0.780)

20.32 (0.800)

1.01 (0.040)

1.40 (0.055)

2.21 (0.087)

2.59 (0.102)

5.25 (0.215)

BSC

Pin 1 – Gate

Pin 2 – Drain

Pin 3 – Source

ABSOLUTE MAXIMUM RATINGS

(T

AMB

= 25°C unless otherwise stated)

V

DSS

I

D

I

DM

V

GS

P

D

T

J

, T

STG

Drain – Source Voltage

Continuous Drain Current

Pulsed Drain Current

Gate – Source Voltage

Total Power Dissipation

Operating and Storage Junction Temperature Range

1500

2

4

±20

50

–55 to +150

V

A

V

W

°C

ELECTRICAL CHARACTERISTICS

(T

AMB

= 25°C unless otherwise stated)

BV

DSS

R

DS(ON)

I

DSS

I

GSS

V

GS(off)

C

iss

C

oss

C

rss

t

on

t

off

V

SD

|Y

FS

|

Characteristic

Drain – Source Breakdown Voltage

Drain – Source On State Resistance

Zero Gate Voltage Drain Current

Gate – Source Leakage Current

Cutoff Voltage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn–on Time

Turn-off Time

Diode Forward Voltage

Forward Transfer Admittance

Test Conditions

V

GS

= 0V , I

D

= 1mA

V

GS

=10V , I

D

= 1A

V

DS

= 1200V , V

GS

= 0V

V

GS

= ±20V , V

DS

= 0V

V

DS

= 10V , I

D

= 1.0mA

V

DS

= 20V

f = 1MHz

V

GS

= 10V

I

D

= 1A

V

GS

= 0 , I

S

= 2A

V

DS

= 20V , I

D

= 1A

1.0

1.5

550

90

30

200

1.0

1.5

ns

V

S

pF

Min.

1500

Typ.

8.0

Max. Unit

V

11.0

100

±100

3.5

W

m

A

nA

V

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Prelim. 2/96

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