BSS74 datasheet, PDF - EEWORLD Datasheet

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BSS74: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-18; CategoryDiscrete semiconductor The transistor; File Size42KB，1 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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BSS74 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-18

BSS74 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknown
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	200 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power consumption environment	2.5 W
Maximum power dissipation(Abs)	0.5 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	110 MHz
VCEsat-Max	0.5 V
Base Number Matches	1

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BSS74 Related Products

	BSS74	2N4239	2N4237	BSW67A	MM3007	BSW68A	BSS75	BSS76
Description	Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-18	3000mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39, METAL PACKAGE-3	3A, 40V, NPN, Si, POWER TRANSISTOR, TO-39, METAL PACKAGE-3	Transistor	Small Signal Bipolar Transistor, 2.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-39	Transistor	Small Signal Bipolar Transistor, 0.5A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-18	Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-18
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Maximum collector current (IC)	0.5 A	3 A	3 A	2 A	2.5 A	2 A	0.5 A	0.5 A
Configuration	SINGLE	SINGLE	SINGLE	Single	SINGLE	Single	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30	30	30	40	30	30	30
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0
Polarity/channel type	PNP	NPN	NPN	NPN	NPN	NPN	PNP	PNP
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	110 MHz	2 MHz	2 MHz	50 MHz	50 MHz	50 MHz	110 MHz	110 MHz
Collector-emitter maximum voltage	200 V	80 V	40 V	-	100 V	-	250 V	300 V
JEDEC-95 code	TO-18	TO-39	TO-39	-	TO-39	-	TO-18	TO-18
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	-	O-MBCY-W3	-	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1	-	1	-	1	1
Number of terminals	3	3	3	-	3	-	3	3
Maximum operating temperature	200 °C	-	175 °C	175 °C	200 °C	175 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	-	METAL	-	METAL	METAL
Package shape	ROUND	ROUND	ROUND	-	ROUND	-	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	-	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	NOT SPECIFIED	-
Maximum power dissipation(Abs)	0.5 W	-	0.8 W	0.8 W	-	0.8 W	0.5 W	0.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	-	Not Qualified	Not Qualified
Terminal form	WIRE	WIRE	WIRE	-	WIRE	-	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	-	BOTTOM	-	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	NOT SPECIFIED	-
Transistor component materials	SILICON	SILICON	SILICON	-	SILICON	-	SILICON	SILICON
Maker	-	Motorola ( NXP )	-	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )

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