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BDV66DF

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size150KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BDV66DF Overview

Transistor,

BDV66DF Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)16 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)1000
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)60 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)40 MHz
Base Number Matches1
This Material Copyrighted By Its Respective Manufacturer

BDV66DF Related Products

BDV66DF BDV66AF BDV66BF
Description Transistor, Transistor, Transistor,
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 16 A 16 A 16 A
Configuration DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 1000 1000 1000
JESD-609 code e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 60 W 60 W 60 W
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches 1 1 1
Nominal transition frequency (fT) 40 MHz - 40 MHz

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Index Files: 1400  2376  2053  2752  2797  29  48  42  56  57 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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