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BDV67AF

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size159KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BDV67AF Overview

Transistor,

BDV67AF Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)16 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)1000
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)60 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)40 MHz
Base Number Matches1
This Material Copyrighted By Its Respective Manufacturer

BDV67AF Related Products

BDV67AF BDV67BF
Description Transistor, Transistor,
Is it Rohs certified? incompatible incompatible
Reach Compliance Code unknown unknown
Maximum collector current (IC) 16 A 16 A
Configuration DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 1000 1000
JESD-609 code e0 e0
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 60 W 60 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 40 MHz 40 MHz
Base Number Matches 1 1
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