INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU926
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 400V (Min)
·Low
Saturation Voltage
: V
CE(sat)
= 1.5V (Max)@I
C
= 5A
APPLICATIONS
·Designed
for use in high-voltage , high-speed , power
switching in inductive circuit.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Base-Emitter Voltage
850
V
V
CEO
Collector-Emitter Voltage
400
V
V
EBO
Emitter-Base Voltage
7
V
I
C
I
CM
Collector Current- Continuous
8
A
Collector Current-Peak
10
A
I
B
B
Base Current- Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
2
A
P
C
120
W
℃
℃
T
J
150
T
stg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.04
UNIT
℃/W
R
th j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BU926
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 100mA ; I
B
= 0
400
V
V
CE
(sat)-1
Collector-Emitter Saturation Voltage
I
C
= 5A; I
B
= 1A
B
1.5
V
V
CE
(sat)-2
Collector-Emitter Saturation Voltage
I
C
= 8A; I
B
= 2A
B
5.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 5A; I
B
= 1A
B
1.6
V
I
CEX
Collector Cutoff Current
V
CE
= 850V; V
BE
= -2.5V
0.5
mA
I
EBO
Emitter Cutoff Current
V
EB
= 7V; I
C
= 0
1.0
mA
f
T
Current-Gain—Bandwidth Product
I
C
= 0.2A; V
CE
= 10V; f
test
= 1MHz
4
MHz
Switching Times
t
on
Turn-On Time
1.0
μs
t
stg
Storage Time
I
C
= 5A ;I
B1
= -I
B2
= 1A; V
CC
= 250V
3.2
μs
t
f
Fall Time
0.8
μs
isc Website：www.iscsemi.cn
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